KDV257E

SEMICONDUCTOR TECHNICAL DATA VCO FOR UHF/VHF BAND. FEATURES Low Series Resistance : rs=0.50 (Max.) MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Reverse Voltage VR Junction Temperature Tj Storage Temperature Range Tstg RATING 10 150 -55 150 UNIT V KDV257E VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE CATHODE MARK B A C 1 2 D 1. ANODE 2. CATHODE E F DIM A B C D E F MILLIMETERS 1.60 +_0.10 1.20 +_0.10 0.80 +_0.10 0.30+_ 0.05 0.60+_ 0.10 0.13+_ 0.05 ESC ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Reverse Voltage VR Reverse Current IR Capacitance C1V C2V Capacitance Ratio K Series Resistance rS TEST CONDITION IR=1 A VR=10V VR=1V, f=1MHz VR=2V, f=1MHz VR=1V, f=470MHz MIN. 10 19.5 14.3 1.3 - TYP. - MAX. 10 23.5 17.6 0.5 UNIT V nA pF Marking Type Name EA 2001. 6. 11 Revision No : 0 1/2 REVERSE CURRENT I R (pA) CAPACITANCE C (pF) 100 Ta=25 C IR - VR 10 KDV257E 100 10 C - VR f=1MHz Ta=25 C 1 0 2 4 6 8 10 REVERSE VOLTAGE VR (V) 1 0 2 4 6 8 10 REVERSE VOLTAGE VR (V) 2001. 6. 11 Revision No : 0 2/2 ...