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KDV258 Dataheets PDF



Part Number KDV258
Manufacturers KEC
Logo KEC
Description VARIABLE CAPACITANCE DIODE
Datasheet KDV258 DatasheetKDV258 Datasheet (PDF)

SEMICONDUCTOR TECHNICAL DATA VCO FOR UHF/VHF BAND. FEATURES High Capacitance Ratio : C1V/C4V =2.0(Min.) Low Series Resistance : rs=0.45 (Max.) MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Reverse Voltage Junction Temperature VR Tj Storage Temperature Range Tstg RATING 15 150 -55 150 UNIT V KDV258 VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE CATHODE MARK E A K F L B 1 G H 2 D MM 1. ANODE 2. CATHODE J C I DIM MILLIMETERS A 2.50 +_ 0.1 B 1.25+_ 0.05 C 0.90 +_0.05 D 0.3.

  KDV258   KDV258



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SEMICONDUCTOR TECHNICAL DATA VCO FOR UHF/VHF BAND. FEATURES High Capacitance Ratio : C1V/C4V =2.0(Min.) Low Series Resistance : rs=0.45 (Max.) MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Reverse Voltage Junction Temperature VR Tj Storage Temperature Range Tstg RATING 15 150 -55 150 UNIT V KDV258 VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE CATHODE MARK E A K F L B 1 G H 2 D MM 1. ANODE 2. CATHODE J C I DIM MILLIMETERS A 2.50 +_ 0.1 B 1.25+_ 0.05 C 0.90 +_0.05 D 0.30+0.06/-0.04 E 1.70 +_ 0.05 F MIN 0.17 G 0.126 +_ 0.03 H 0~0.1 I 1.0 MAX J 0.15 +_0.05 K 0.4 +_0.05 L 2 +4/-2 M 4~6 USC ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Reverse Voltage Reverse Current Capacitance VR IR C1V C4V Capacitance Ratio K Series Resistance rS TEST CONDITION IR=1 A VR=10V VR=1V, f=1MHz VR=4V, f=1MHz VR=1V, f=470MHz MIN. 15 19.0 8.5 2.0 - TYP. - MAX. 10 21.0 10.0 0.45 UNIT V nA pF Marking Type Name U6 Lot No. 2008. 9. 11 Revision No : 1 1/2 REVERSE CURRENT I R (pA) CAPACITANCE C (pF) 1K Ta=25 C IR - VR 100 KDV258 100 10 C - VR f=1MHz Ta=25 C 10 0 2 4 6 8 10 12 14 16 REVERSE VOLTAGE VR (V) 1 0 5 10 15 20 REVERSE VOLTAGE VR (V) 2008. 9. 11 Revision No : 1 2/2 .


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