Document
SEMICONDUCTOR
TECHNICAL DATA
VCO FOR UHF/VHF BAND.
FEATURES High Capacitance Ratio : C1V/C4V =2.0(Min.) Low Series Resistance : rs=0.45 (Max.)
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Voltage Junction Temperature
VR Tj
Storage Temperature Range
Tstg
RATING 15 150
-55 150
UNIT V
KDV258
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE
CATHODE MARK E A K
F L
B 1
G
H
2 D
MM 1. ANODE 2. CATHODE
J C
I
DIM MILLIMETERS A 2.50 +_ 0.1 B 1.25+_ 0.05 C 0.90 +_0.05 D 0.30+0.06/-0.04 E 1.70 +_ 0.05 F MIN 0.17 G 0.126 +_ 0.03 H 0~0.1 I 1.0 MAX J 0.15 +_0.05 K 0.4 +_0.05 L 2 +4/-2 M 4~6
USC
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Voltage Reverse Current
Capacitance
VR IR C1V C4V
Capacitance Ratio
K
Series Resistance
rS
TEST CONDITION IR=1 A VR=10V VR=1V, f=1MHz VR=4V, f=1MHz
VR=1V, f=470MHz
MIN. 15 19.0 8.5 2.0 -
TYP. -
MAX. 10
21.0 10.0
0.45
UNIT V nA
pF
Marking
Type Name
U6
Lot No.
2008. 9. 11
Revision No : 1
1/2
REVERSE CURRENT I R (pA) CAPACITANCE C (pF)
1K Ta=25 C
IR - VR
100
KDV258
100 10
C - VR
f=1MHz Ta=25 C
10 0 2 4 6 8 10 12 14 16
REVERSE VOLTAGE VR (V)
1 0 5 10 15 20
REVERSE VOLTAGE VR (V)
2008. 9. 11
Revision No : 1
2/2
.