VARIABLE CAPACITANCE DIODE
SEMICONDUCTOR
TECHNICAL DATA
CATV TUNING.
FEATURES High Capacitance Ratio : C2V/C25V=11.0(Min.) Low Series Resistance : ...
Description
SEMICONDUCTOR
TECHNICAL DATA
CATV TUNING.
FEATURES High Capacitance Ratio : C2V/C25V=11.0(Min.) Low Series Resistance : rS=0.75 (Max.) Excellent C-V Characteristics, and Small Tracking Error. Useful for Small Size Tuner.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Voltage Junction Temperature
VR Tj
Storage Temperature Range
Tstg
RATING 34 125
-55 125
UNIT V
KDV269
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE
CATHODE MARK E A K
F L
B 1
G
H
2 D
MM 1. ANODE 2. CATHODE
J C
I
DIM MILLIMETERS A 2.50 +_ 0.1 B 1.25+_ 0.05 C 0.90 +_0.05 D 0.30+0.06/-0.04 E 1.70 +_ 0.05 F MIN 0.17 G 0.126 +_ 0.03 H 0~0.1 I 1.0 MAX J 0.15 +_0.05 K 0.4 +_0.05 L 2 +4/-2 M 4~6
USC
Marking
Type Name
UR
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Current
IR
Capacitance
C2V
Capacitance
C25V
Capacitance Ratio
C2V/C25V
Series Resistance
rS
Note : Available in matched group for capacitance to 2.0%.
C(Max.)-C(Min.) 0.02 C(Min.)
(VR=2~25V)
TEST CONDITION VR=28V VR=2V, f=1MHz VR=25V, f=1MHz
VR=5V, f=470MHz
MIN. 29 2.5
11.0 -
TYP. -
31.5 2.75 11.5
-
MAX. 10 34 2.9 0.75
UNIT nA pF pF -
2008. 9. 11
Revision No : 6
1/2
REVERSE CURRENT IR (A)
KDV269
-9
10
-10
10
-11
10
-12
10
-13
10 0
IR - VR
10 20 30 REVERSE VOLTAGE VR (V)
40
TOTAL CAPACITANCE CT (pF)
C T - VR
60 f=1MHz
40
20
0 1 10 50 REVERSE VOLTAGE VR (V)
0.8 0.6
0.4
0.2 0 1
r s - VR
f=470MHz
10 REVERSE VOLTAGE VR (V)
50
∆(LOG CT) / ∆(LOG VR)
∆(LOG CT) / ...
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