KDV287

SEMICONDUCTOR TECHNICAL DATA UHF SHF TUNING. FEATURES ᴌHigh Capacitance Ratio : C2V/C25V=7.6(Typ.) ᴌLow Series Resistance : rS=1.9ή(Typ.) ᴌExcellent C-V Characteristics, and Small Tracking Error. ᴌUseful for Small Size Tuner. MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMBOL Reverse Voltage Peak Reverse Voltage Junction Temperature VR VRM Tj Storage Temperature Range Tstg RATING 30 35(RL=10kή) 125 -55ᴕ125 UNIT V V ᴱ ᴱ CATHODE MARK E A K F L KDV287 VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE B 1 G H 2 D MM 1. ANODE 2. CATHODE J C I DIM MILLIMETERS A 2.50 +_ 0.1 B 1.25+_ 0.05 C 0.90 +_0.05 D 0.30+0.06/-0.04 E 1.70 +_ 0.05 F MIN 0.17 G 0.126 +_ 0.03 H 0~0.1 I 1.0 MAX J 0.15 +_0.05 K 0.4 +_0.05 L 2 +4/-2 M 4~6 USC ELECTRICAL CHARACTERISTICS (Ta=25ᴱ) CHARACTERISTIC SYMBOL Reverse Voltage VR Reverse Current IR Capacitance C2V Capacitance C25V Capacitance Ratio C2V/C25V Series Resistance rS Note : Available in matched group for capacitance to 6%. C(Max.)-C(Min.) C(Min.) ⏊0.06 (VR=2~25V) TEST CONDITION IR=1ỌA VR=28V VR=2V, f=1MHz VR=25V, f=1MHz VR=5V, f=470MHz MIN. 30 4.2 0.53 7.3 - TYP. 1.9 MAX. 10 5.7 0.68 2.3 UNIT V nA pF pF - ή Marking Type Name UP 2001. 6. 11 Revision No : 1 1/1 ...