KDV350

SEMICONDUCTOR TECHNICAL DATA VCO. FEATURES Low Series Resistance : rS=0.50 (Max.) Small Package. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Reverse Voltage Junction Temperature VR Tj Storage Temperature Range Tstg RATING 15 150 -55 150 UNIT V KDV350 VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE CATHODE MARK E A K F L B 1 G H 2 D MM 1. ANODE 2. CATHODE J C I DIM MILLIMETERS A 2.50 +_ 0.1 B 1.25+_ 0.05 C 0.90 +_0.05 D 0.30+0.06/-0.04 E 1.70 +_ 0.05 F MIN 0.17 G 0.126 +_ 0.03 H 0~0.1 I 1.0 MAX J 0.15 +_0.05 K 0.4 +_0.05 L 2 +4/-2 M 4~6 USC ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Reverse Voltage VR Reverse Current IR Capacitance C1V C4V Capacitance Ratio K Series Resistance rS TEST CONDITION IR=1 A VR=15V VR=1V, f=1MHz VR=4V, f=1MHz C1V/C4V, f=1MHz VR=1V, f=470MHz MIN. 15 15.0 5.3 2.8 - TYP. - MAX. 10 17.5 6.3 0.5 UNIT V nA pF Marking Type Name UK Lot No. 2008. 9. 11 Revision No : 2 1/2 REVERSE CURRENT I R (A) KDV350 -11 10 IR - VR -12 10 -13 10 0 4 8 12 REVERSE VOLTAGE VR (V) 16 CAPACITANCE C (pF) CR - V 25 f=1MHz 20 15 10 5 0 -1 10 1.0 REVERSE VOLTAGE VR (V) 10 r s - VR 0.4 f=1MHz 0.3 0.2 0.1 0 0.5 1.0 3.0 5.0 10 30 50 REVERSE VOLTAGE VR (V) SERIES RESISTANCE r s (Ω) 2008 .9. 11 Revision No : 2 2/2 ...