Document
ISC026N03L5S
MOSFET
OptiMOSTMPower-MOSFET,30V
Features
•OptimizedforhighperformanceBuckconverter •Verylowon-resistanceRDS(on)@VGS=4.5V •Superiorthermalresistance •N-channel •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21
Productvalidation
QualifiedaccordingtoJEDECStandard
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS 30
V
RDS(on),max
2.6
mΩ
ID 100 A
QOSS
16
nC
QG(0V..10V)
26
nC
SuperSO8
8 7 65
56 78
1 23 4
4321
S1 8D S2 7D S3 6D G4 5D
Type/OrderingCode ISC026N03L5S
Package PG-TDSON-8
Marking 026N03L5
RelatedLinks -
Final Data Sheet
1 Rev.2.0,2020-02-25
OptiMOSTMPower-MOSFET,30V
ISC026N03L5S
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Final Data Sheet
2 Rev.2.0,2020-02-25
OptiMOSTMPower-MOSFET,30V
ISC026N03L5S
1Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Continuous drain current
ID
Pulsed drain current2) Avalanche current, single pulse3) Avalanche energy, single pulse Gate source voltage
Power dissipation
Operating and storage temperature
ID,pulse IAS EAS VGS
Ptot
Tj,Tstg
Min.
-
-
-
-
-20
-
-55
Values Typ. Max.
- 100 - 67 - 91 - 58 - 24
- 400
- 50
- 40
- 20
- 48 - 2.5
- 150
Unit Note/TestCondition
VGS=10V,TC=25°C VGS=10V,TC=100°C A VGS=4.5V,TC=25°C VGS=4.5V,TC=100°C VGS=10V,TA=25°C,RthJA=50K/W1)
A TC=25°C A TC=25°C mJ ID=40A,RGS=25Ω
V-
W
TC=25°C TA=25°C,RthJA=50K/W1)
°C
IEC climatic category; DIN IEC 68-1: 55/150/56
2Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Symbol
Thermal resistance, junction - case, bottom
Thermal resistance, junction - case, top
Device on PCB, 6 cm2 cooling area1)
RthJC RthJC RthJA
Values Unit Note/TestCondition
Min. Typ. Max. - - 2.6 K/W - - 20 K/W - - 50 K/W -
1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 2) See figure 3 for more detailed information 3) See figure 13 for more detailed information
Final Data Sheet
3 Rev.2.0,2020-02-25
OptiMOSTMPower-MOSFET,30V
ISC026N03L5S
3Electricalcharacteristics
atTj=25°C,unlessotherwisespecified
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Gate resistance Transconductance
V(BR)DSS VGS(th)
IDSS
IGSS
RDS(on)
RG gfs
Min. 30 1.2
-
-
-
55
Values Typ. Max. --
-2
0.1 1 10 100
10 100
2.8 3.5 2.2 2.6
0.9 -
110 -
Unit Note/TestCondition
V VGS=0V,ID=1mA
V VDS=VGS,ID=250µA
µA
VDS=30V,VGS=0V,Tj=25°C VDS=30V,VGS=0V,Tj=125°C
nA VGS=20V,VDS=0V
mΩ
VGS=4.5V,ID=30A VGS=10V,ID=30A
ΩS |VDS|>2|ID|RDS(on)max,ID=30A
Table5Dynamiccharacteristics
Parameter
Symbol
Input capacitance Output capacitance Reverse transfer capacitance
Turn-on delay time
Ciss Coss Crss
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Min. -
-
-
-
Values Typ. Max. 1700 600 88 4.2 -
5.2 -
21 -
3.6 -
Unit Note/TestCondition
pF VGS=0V,VDS=15V,f=1MHz
pF VGS=0V,VDS=15V,f=1MHz
pF VGS=0V,VDS=15V,f=1MHz
ns
VDD=15V,VGS=10V,ID=30A, RG,ext=1.6Ω
ns
VDD=15V,VGS=10V,ID=30A, RG,ext=1.6Ω
ns
VDD=15V,VGS=10V,ID=30A, RG,ext=1.6Ω
ns
VDD=15V,VGS=10V,ID=30A, RG,ext=1.6Ω
Table6Gatec.