KTX201E

SEMICONDUCTOR TECHNICAL DATA KTX201E EPITAXIAL PLANAR NPN/PNP TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES Including two devices in TESV. (Thin Extreme Super mini type with 5 pin) Simplify circuit design. Reduce a quantity of parts and manufacturing process. Marking Q1 MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Q2 MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Q1 Q2 MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Collector Power Dissipation Junction Temperature Storage Temperature Range * Total Rating. 2008. 9. 23 Revision No : 2 SYMBOL VCBO VCEO VEBO IC IB SYMBOL VCBO VCEO VEBO IC IB SYMBOL PC * Tj Tstg RATING -50 -50 -5 -150 -30 RATING 60 50 5 150 30 RATING 200 150 -55 150 UNIT V V V UNIT V V V UNIT 1/5 KTX201E Q1 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance ICBO IEBO hFE (Note) VCE(SAT) fT Cob VCB=-50V, IE=0 VEB=-5V, IC=0 VCE=-6V, IC=-2 IC=-100 , IB=-10 VCE=-10V, IC=-1 VCB=-10V, IE=0, f=1 Noise Figure NF VCE=-6V, IC=-0.1 , f=1 , Rg=10 Note)hFE Classification : Y(4)120~240, GR(6)200~400 MIN. - 120 80 - TYP. - -0.1 4.0 1.0 MAX. -0.1 -0.1 400 -0.3 7.0 10 UNIT. V Q2 ELECTRICAL CHARACTERISTICS ...