SEMICONDUCTOR
TECHNICAL DATA
KTX301E
EPITAXIAL PLANAR PNP TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE
GENERAL PURPO...
SEMICONDUCTOR
TECHNICAL DATA
KTX301E
EPITAXIAL PLANAR
PNP TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE
GENERAL PURPOSE APPLICATION. ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES Including two(TR, Diode) devices in TESV. (Thin Extreme Super mini type with 5pin.) Simplify circuit design. Reduce a quantity of parts and manufacturing process.
EQUIVALENT CIRCUIT (TOP VIEW)
54
Marking
5
Q1 D1
CType Name
12 3
12
4 Lot No.
hFE Rank 3
MARK SPEC Type Mark
KTX301E Q1 hFE Rank : Y
CA
KTX301E Q1 hFE Rank : GR
CB
H
A A1 CC
B B1
1 5 DIM MILLIMETERS A 1.6 +_ 0.05 A1 1.0+_ 0.05
2 B 1.6+_ 0.05 B1 1.2+_ 0.05
3 4 C 0.50 D 0.2+_ 0.05 H 0.5+_ 0.05
P P J 0.12+_ 0.05 P5
1. D1 ANODE 2. Q 1 EMITTER 3. Q 1 BASE 4. Q 1 COLLECTOR 5. D1 CATHODE
TESV
JD
MAXIMUM RATINGS (Ta=25 )
TRANSISTOR Q1
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range
DIODE D1
CHARACTERISTIC
Maximum (Peak) Reverse Voltage
Reverse Voltage
Maximum (Peak) Forward Current
Average Forward Current
Surge Current (10mS)
Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg
SYMBOL VRM VR IFM IO IFSM PD Tj Tstg
RATING -50 -50 -5 -150 -30 100 150
-55~150
RATING 85 80 300 100 2 150
-55 150
UNIT V V V
UNIT V V
A
2008. 9. 23
Revision No : 2
1/2
KTX301E
ELECTRICAL CHARACTERISTICS (Ta=25 )
TRANSISTOR Q1
CHARACTERISTIC
...