KTX301U

SEMICONDUCTOR TECHNICAL DATA KTX301U EPITAXIAL PLANAR PNP TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE GENERAL PURPOSE APPLICATION. ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES Including two(TR, Diode) devices in USV. (Ultra Super Mini type with 5 leads) Simplify circuit design. Reduce a quantity of parts and manufacturing process. EQUIVALENT CIRCUIT (TOP VIEW) 54 Marking 54 Q1 D1 Type Name CA Lot No. 12 3 MARK SPEC Type Mark KTX301U Q1 hFE Rank : Y CA 123 KTX301U Q1 hFE Rank : GR CB A A1 CC H B B1 1 5 DIM MILLIMETERS A 2.00+_ 0.20 2 A1 1.3+_ 0.1 B 2.1+_ 0.1 3 4 D B1 1.25+_ 0.1 C 0.65 D 0.2+0.10/-0.05 G 0-0.1 H 0.9 +_0.1 T T 0.15+0.1/-0.05 G 1. D 1 ANODE 2. Q 1 EMITTER 3. Q 1 BASE 4. Q 1 COLLECTOR 5. D1 CATHODE USV MAXIMUM RATINGS (Ta=25 ) TRANSISTOR Q1 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature Storage Temperature Range DIODE D1 CHARACTERISTIC Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current Surge Current (10mS) Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg SYMBOL VRM VR IFM IO IFSM PD Tj Tstg RATING -50 -50 -5 -150 -30 100 150 -55~150 RATING 85 80 300 100 2 150 -55 150 UNIT V V UNIT V V A 2008. 8. 29 Revision No : 4 1/2 KTX301U ELECTRICAL CHARACTERISTICS (Ta=25 ) TRANSISTOR Q1 CHARACTERISTIC SYMBOL...