SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION. LOW VOLTAGE HIGH SPEED SWITCHING.
FEATURES Including two(TR,...
SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION. LOW VOLTAGE HIGH SPEED SWITCHING.
FEATURES Including two(TR, Diode) devices in USV. (Ultra Super Mini type with 5 leads) Simplify circuit design. Reduce a quantity of parts and manufacturing process.
EQUIVALENT CIRCUIT (TOP VIEW)
54
Marking
5
4
D1 Q1
Type Name
CG
Lot No.
12
MARK SPEC Type Mark
3
KTX402U Q1 hFE Rank : Y
CG
123
KTX402U Q1 hFE Rank : GR
CJ
A A1 CC
KTX402U
EPITAXIAL PLANAR
NPN TRANSISTOR SCHOTTKY BARRIER TYPE DIODE
H
B B1
1 5 DIM MILLIMETERS
A 2.00+_ 0.20
2 A1 1.3+_ 0.1
B 2.1+_ 0.1
3
4D
B1
1.25+_ 0.1
C 0.65
D 0.2+0.10/-0.05
G 0-0.1
H 0.9+_ 0.1
T T 0.15+0.1/-0.05
G
1. D 1 ANODE 2. Q 1 BASE 3. Q 1 EMITTER 4. Q 1 COLLECTOR 5. D1 CATHODE
USV
MAXIMUM RATINGS (Ta=25 )
TRANSISTOR Q1
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature Storage Temperature Range
DIODE (SBD) D1 CHARACTERISTIC
Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current Surge Current (10mS) Junction Temperature Storage Temperature Range
SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg
SYMBOL VRM VR IFM IO IFSM Tj Tstg
RATING 60 50 5 150 30 100 150
-55~125
RATING 30 30 300 200 1 125
-55 125
UNIT V V
UNIT V V A
2008. 8. 29
Revision No : 2
1/4
KTX402U
ELECTRICAL CHARACTERISTICS (Ta=25 )
TRANSISTOR Q1
CHARACTERISTIC
SYMBOL
Collector Cut-off Current ...