KTX403U

SEMICONDUCTOR TECHNICAL DATA SWITCHING APPLICATION. LOW VOLTAGE HIGH SPEED SWITCHING. FEATURES Including two(TR, Diode) devices in USV. (Ultra Super Mini type with 5 leads) Simplify circuit design. Reduce a quantity of parts and manufacturing process. KTX403U EPITAXIAL PLANAR NPN TRANSISTOR SCHOTTKY BARRIER TYPE DIODE EQUIVALENT CIRCUIT (TOP VIEW) MAXIMUM RATINGS (Ta=25 ) TRANSISTOR Q1 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range DIODE (SBD) D1 CHARACTERISTIC Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current Surge Current (10mS) Junction Temperature Storage Temperature Range 2008. 8. 29 Revision No : 3 SYMBOL VCBO VCEO VEBO IC ICP * PC Tj Tstg SYMBOL VRM VR IFM IO IFSM Tj Tstg RATING 15 12 6 500 1 100 150 -55~125 RATING 30 30 300 200 1 125 -55 125 UNIT V V A UNIT V V A 1/4 KTX403U ELECTRICAL CHARACTERISTICS (Ta=25 ) TRANSISTOR Q1 CHARACTERISTIC SYMBOL Collector Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage ICBO V(BR)CBO V(BR)CEO Emitter-Base Breakdown Voltage V(BR)EBO DC Current Gain hFE Collector-Emitter Saturation Voltage VCE(SAT) Transition Frequency fT Collector Output Capacitance Cob TEST CONDITION VCB=15V, IE=0 IE=10 IC=1 IE=10 VCE=2V, IC=10 IC=200 , IB=10 VCE=2V, IC=10 , f=100 VCB=10V, IE=0, f=1 DIODE (SBD) D1 CHARACTERISTI...