Document
SEMICONDUCTOR
TECHNICAL DATA
SWITCHING APPLICATION. AUDIO MUTING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES ᴌWith Built-in Bias Resistors. ᴌSimplify Circuit Design. ᴌReduce a Quantity of Parts and Manufacturing Process.
EQUIVALENT CIRCUIT
R1 B
C
E
J K
D
KRC231M~KRC235M
EPITAXIAL PLANAR NPN TRANSISTOR
B
F A
HM
C
EE
1 2 3N L
1. EMITTER 2. COLLECTOR 3. BASE
G
O DIM MILLIMETERS A 3.20 MAX B 4.30 MAX C 0.55 MAX D 2.40+_ 0.15 E 1.27
F 2.30 G 14.00+_ 0.50 H 0.60 MAX J 1.05 K 1.45
L 25 M 0.80 N 0.55 MAX
O 0.75
TO-92M
MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range
SYMBOL VCBO VCEO VEBO IC PC Tj Tstg
RATING 30 15 5 600 400 150
-55ᴕ150
UNIT V V V mA
mW ᴱ ᴱ
2000. 8. 23
Revision No : 1
1/4
KRC231M~KRC235M
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Collector-Emitter Saturation Voltage
DC Current Gain
KRC231M
KRC232M
Input Resistor
KRC233M
KRC234M
KRC235M
Transition Frequency
On Resistance
Note : * Characteristic of Transistor Only.
SYMBOL BVCEO BVCBO BVEBO ICBO VCE(sat) hFE
R1
fT* Ron
TEST CONDITION IC=1mA IC=50ỌA IE=50ỌA VCB=30V IC=50mA, IB=2.5mA VCE=5V, IC=50mA
VCE=10V, IE=-50mA, f=100MHz f=1kHz, IB=1mA, VIN=0.3V
MIN. 15 30 5.0 200 -
TYP. 40
350 2.2 5.6 10 4.7 6.8 200 0.6
MAX. UNIT -V -V -V 0.5 ỌA 80 mV
800 - kή - MHz -ή
2000. 8. 23
Revision No : 1
2/4
.