KGF15N65PDA

SEMICONDUCTOR TECHNICAL DATA KGF15N65PDA General Description KEC Field Stop Trench IGBTs offer low switching losses, high energy efficiency and short circuit ruggedness. It is designed tor applications such as motor control, uninterrupted power. FEATURES High speed switching High ruggedness, temperature stable behavior Short Circuit Withstand Times > 5 s(@TC=100 Extremely enhanced avalache capability ) A E H C F B L J K I DIM MILLIMETERS A 9.9 +_ 0.3 B 15.70 +_ 0.4 D C 1.3 +_ 0.03 GD 0.8 +_ 0.1 M E 3.6 +_ 0.05 F 2.8 +_ 0.07 G 0.5 +_ 0.05 H 4.50 +_ 0.1 I 13.08 +_ 0.3 J 2.4 +_ 0.1 K 1.40 Max. L 9.2 +_ 0.1 M 2.54 BSC MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT Collector-Emitter Voltage Gate-Emitter Voltage VCES VGES 650 V 20 V Collector Current @Tc=25 @Tc=100 30 A IC 15 A Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current @Tc=25 ICM* 45 A IF 15 A IFM 45 A Maximum Power Dissipation @Tc=25 @Tc=100 99 W PD 39 W Maximum Junction Temperature Tj 150 Storage Temperature Range Tstg -55 to + 150 *Repetitive rating : Pulse width limited by max. junction temperature THERMAL CHARACTERISTIC CHARACTERISTIC Thermal Resistance, Junction to Case (IGBT) Thermal Resistance, Junction to Case (DIODE) Thermal Resistance, Junction to Ambient SYMBOL Rt h JC Rt h JC Rt h JA MAX. 1.26 3.0 62.5 UNIT /W /W /W TO-220AB(3) C G E E C G 2018. 06. 20 Revision No : 0 1/8 KGF15N65PDA ELECTRICAL CHARACTERISTICS ...