KGT15N135KDH

SEMICONDUCTOR TECHNICAL DATA General Description KEC NPT IGBTs offer low switching losses, high energy efficiency and high avalanche ruggedness for soft switching application such as IH(induction heating), microwave oven, etc. FEATURES High speed switching High ruggedness, temperature stable behavior Soft current turn-off waveforms Extremely enhanced avalanche capability KGT15N135KDH MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT Collector-Emitter Voltage Gate-Emitter Voltage VCES VGES 1350 20 V V Collector Current Pulsed Collector Current @TC=25 @TC=100 Diode Continuous Forward Current @TC=100 Diode Maximum Forward Current 30 A IC 15 A ICM* 45 A IF 15 A IFM 45 A Maximum Power Dissipation Maximum Junction Temperature @TC=25 @TC=100 150 W PD 60 W Tj 150 Storage Temperature Range Tstg -55 to + 150 *Repetitive rating : Pulse width limited by max. junction temperature THERMAL CHARACTERISTIC CHARACTERISTIC Thermal Resistance, Junction to Case (IGBT) Thermal Resistance, Junction to Case (DIODE) Thermal Resistance, Junction to Ambient SYMBOL Rt h JC Rt h JC Rt h JA MAX. 0.82 2.3 40 UNIT /W /W /W 2013. 7. 15 Revision No : 0 E C G 1/8 KGT15N135KDH ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION Static Collector-Emitter Breakdown Voltage BVCES VGE=0V , IC=1.0mA Collector Cut-off Current ICES VGE=0V, VCE=1200V Gate Leakage Current Gate Threshold Voltage Collector-Emitter Saturation Voltage Dynamic IGES VGE(th) VCE(s...