KGF30N60KDA

SEMICONDUCTOR TECHNICAL DATA General Description KEC Field Stop Trench IGBTs offer low switching losses, high energy efficiency and short circuit ruggedness. It is designed for applications such as motor control, uninterrupted power supplies(UPS), general inverters. FEATURES High speed switching High ruggedness, temperature stable behavior Short Circuit Withstand Times 10us Extremely enhanced avalanche capability KGF30N60KDA MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT Collector-Emitter Voltage Gate-Emitter Voltage VCES VGES 600 V 20 V Collector Current @Tc=25 @Tc=100 60 A IC 30 A Pulsed Collector Current Diode Continuous Forward Current @Tc=25 Diode Maximum Forward Current ICM* 90 A IF 30 A IFM* 90 A Maximum Power Dissipation @Tc=25 @Tc=100 178 W PD 71 W Maximum Junction Temperature Tj 150 Storage Temperature Range Tstg -55 to + 150 *Repetitive rating : Pulse width limited by max. junction temperature THERMAL CHARACTERISTIC CHARACTERISTIC Thermal Resistance, Junction to Case (IGBT) Thermal Resistance, Junction to Case (DIODE) Thermal Resistance, Junction to Ambient SYMBOL Rt h JC Rt h JC Rt h JA MAX. 0.7 1.55 40 UNIT /W /W /W 2015. 8. 07 Revision No : 2 E C G 1/8 KGF30N60KDA ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION Static Collector-Emitter Breakdown Voltage Collector Cut-off Current BVCES ICES VGE=0V , IC=250 VGE=0V, VCE=600V Gate Leakage Current Gate Threshold Voltage Collector-Emitter Saturat...