KGF30N110KRH

SEMICONDUCTOR TECHNICAL DATA KGF30N110KRH General Description KEC Field Stop Trench IGBTs offer low switching losses, high energy efficiency for soft switching application such as IH(induction heating), microwave oven, etc. FEATURES High speed switching Soft current turn-off waveforms GJ HC AB O SK D E F PP 123 DIM MILLIMETERS A 15.90 +_ 0.30 B 5.00 +_ 0.20 C 20.85 +_ 0.30 D 3.00 +_ 0.20 E 2.00 +_ 0.20 F 1.20 +_ 0.20 MG H I Max. 4.50 20.10 +_ 0.70 0.60 +_ 0.02 I J 14.70 +_ 0.20 K 2.00 +_ 0.10 M 2.40 +_ 0.20 O 3.60 +_ 0.30 P 5.45 +_ 0.30 Q 3.60 +_ 0.20 R 7.19 +_ 0.10 S 1. GATE 2. COLLECTOR 3. EMITTER MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT Collector-Emitter Voltage Gate-Emitter Voltage VCES VGES 1100 25 V V Collector Current @Tc=25 @Tc=100 60 A IC 30 A Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current @Tc=100 ICM* 90 A IF 30 A IFM 90 A Maximum Power Dissipation @Tc=25 @Tc=100 365 W PD 182 W Maximum Junction Temperature Tj 175 Storage Temperature Range Tstg -55 to + 175 *Repetitive rating : Pulse width limited by max. junction temperature TO-247 C G E THERMAL CHARACTERISTIC CHARACTERISTIC Thermal Resistance, Junction to Case (IGBT) Thermal Resistance, Junction to Case (DIODE) Thermal Resistance, Junction to Ambient SYMBOL Rt h JC Rt h JC Rt h JA MAX. 0.41 0.41 40 UNIT /W /W /W E C G 2018. 12. 12 Revision No : 3 1/6 KGF30N110KRH ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC...