Document
SEMICONDUCTOR
TECHNICAL DATA
General Description
KEC Field Stop Trench IGBTs offer low switching losses, high energy efficiency and short circuit ruggedness. It is designed for applications such as motor control, uninterrupted power supplies(UPS), general inverters.
FEATURES High speed switching High ruggedness, temperature stable behavior Short Circuit Withstand Times 10us Extremely enhanced avalanche capability
KGF20N60KDA
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING UNIT
Collector-Emitter Voltage
VCES 600 V
Gate-Emitter Voltage
VGES
20 V
Collector Current
@Tc=25 @Tc=100
40 A IC
20 A
Pulsed Collector Current Diode Continuous Forward Current @Tc=100 Diode Maximum Forward Current
ICM* 60 A IF 40 A IFM 60 A
Maximum Power Dissipation
@Tc=25 @Tc=100
156 W PD
62 W
Maximum Junction Temperature
Tj 150
Storage Temperature Range
Tstg -55 to + 150
*Repetitive rating : Pulse width limited by max. junction temperature
THERMAL CHARACTERISTIC
CHARACTERISTIC Thermal Resistance, Junction to Case (IGBT) Thermal Resistance, Junction to Case (DIODE) Thermal Resistance, Junction to Ambient
SYMBOL Rt h JC Rt h JC Rt h JA
MAX. 0.8 1.8 40
UNIT /W /W /W
E C G
2015. 8. 07
Revision No : 1
1/8
KGF20N60KDA
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Static
Collector-Emitter Breakdown Voltage Collector Cut-off Current
BVCES ICES
VGE=0V , IC=250 A VGE=0V, VCE=600V
Gate Leakage Current Gate Threshold Voltage
Collector-Emitter Saturation Voltage
IGES VGE(th)
VCE(sat)
VCE=0V, VGE= 20V VGE=VCE, IC=2mA VGE=15V, IC=20A VGE=15V, IC=40A
Dynamic
VGE=15V, IC=20A, TC = 125
Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Turn-On Delay Time
Qg Qge Qgc td(on)
VCC=300V, VGE=15V, IC= 20A
Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss
tr td(off)
tf Eon Eoff
VCC=300V, IC=20A, VGE=15V,RG=10 Inductive Load, TC = 25 (Note 1)
Total Switching Loss
Ets
Turn-On Delay Time
td(on)
Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Input Capacitance Ouput Capacitance Reverse Transfer Capacitance
tr td(off)
tf Eon Eoff Ets Cies Coes Cres
VCC=300V, IC=20A, VGE=15V, RG=10 Inductive Load, TC = 125 (Note 1)
VCE=30V, VGE=0V, f=1MHz
Short Circuit Withstand Time
tsc VCC=300V, VGE=15V, TC=100
Note 1 : Energy loss include tail current and diode reverse recovery.
Marking
MIN. TYP. MAX. UNIT
600 - - V
-
- 250
A
- - 100 nA
4.5 5.5
7
V
- 1.7 2.1 V
- 2.3 -
V
- 1.95 -
V
- 100 -
nC
- 20 - nC
- 55 - nC
- 35 - ns
- 20 - ns
- 120 -
ns
- 30 - ns
- 0.4 0.55 mJ
-
0.22 0.35
mJ
- 0.62 0.9 mJ
- 35 - ns
- 25 - ns
- 125 -
ns
- 50 - ns
- 0.45 -
mJ
- 0.35 -
mJ
- 0.8 - mJ
-
1700 2210
pF
- 100 -
pF
- 65 - pF
10 -
-
s
2015. 8. 07
Revision No : 1
2/8
KGF20N60KDA
ELECTRICAL CHARACTERISTIC OF DIODE
CHARACTERISTIC Diode Forward Voltage Diode Reverse Recovery Time Diode Peak Reverse R.