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KGF20N60KDA Dataheets PDF



Part Number KGF20N60KDA
Manufacturers KEC
Logo KEC
Description IGBT
Datasheet KGF20N60KDA DatasheetKGF20N60KDA Datasheet (PDF)

SEMICONDUCTOR TECHNICAL DATA General Description KEC Field Stop Trench IGBTs offer low switching losses, high energy efficiency and short circuit ruggedness. It is designed for applications such as motor control, uninterrupted power supplies(UPS), general inverters. FEATURES High speed switching High ruggedness, temperature stable behavior Short Circuit Withstand Times 10us Extremely enhanced avalanche capability KGF20N60KDA MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT Collecto.

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SEMICONDUCTOR TECHNICAL DATA General Description KEC Field Stop Trench IGBTs offer low switching losses, high energy efficiency and short circuit ruggedness. It is designed for applications such as motor control, uninterrupted power supplies(UPS), general inverters. FEATURES High speed switching High ruggedness, temperature stable behavior Short Circuit Withstand Times 10us Extremely enhanced avalanche capability KGF20N60KDA MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT Collector-Emitter Voltage VCES 600 V Gate-Emitter Voltage VGES 20 V Collector Current @Tc=25 @Tc=100 40 A IC 20 A Pulsed Collector Current Diode Continuous Forward Current @Tc=100 Diode Maximum Forward Current ICM* 60 A IF 40 A IFM 60 A Maximum Power Dissipation @Tc=25 @Tc=100 156 W PD 62 W Maximum Junction Temperature Tj 150 Storage Temperature Range Tstg -55 to + 150 *Repetitive rating : Pulse width limited by max. junction temperature THERMAL CHARACTERISTIC CHARACTERISTIC Thermal Resistance, Junction to Case (IGBT) Thermal Resistance, Junction to Case (DIODE) Thermal Resistance, Junction to Ambient SYMBOL Rt h JC Rt h JC Rt h JA MAX. 0.8 1.8 40 UNIT /W /W /W E C G 2015. 8. 07 Revision No : 1 1/8 KGF20N60KDA ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION Static Collector-Emitter Breakdown Voltage Collector Cut-off Current BVCES ICES VGE=0V , IC=250 A VGE=0V, VCE=600V Gate Leakage Current Gate Threshold Voltage Collector-Emitter Saturation Voltage IGES VGE(th) VCE(sat) VCE=0V, VGE= 20V VGE=VCE, IC=2mA VGE=15V, IC=20A VGE=15V, IC=40A Dynamic VGE=15V, IC=20A, TC = 125 Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Turn-On Delay Time Qg Qge Qgc td(on) VCC=300V, VGE=15V, IC= 20A Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss tr td(off) tf Eon Eoff VCC=300V, IC=20A, VGE=15V,RG=10 Inductive Load, TC = 25 (Note 1) Total Switching Loss Ets Turn-On Delay Time td(on) Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Input Capacitance Ouput Capacitance Reverse Transfer Capacitance tr td(off) tf Eon Eoff Ets Cies Coes Cres VCC=300V, IC=20A, VGE=15V, RG=10 Inductive Load, TC = 125 (Note 1) VCE=30V, VGE=0V, f=1MHz Short Circuit Withstand Time tsc VCC=300V, VGE=15V, TC=100 Note 1 : Energy loss include tail current and diode reverse recovery. Marking MIN. TYP. MAX. UNIT 600 - - V - - 250 A - - 100 nA 4.5 5.5 7 V - 1.7 2.1 V - 2.3 - V - 1.95 - V - 100 - nC - 20 - nC - 55 - nC - 35 - ns - 20 - ns - 120 - ns - 30 - ns - 0.4 0.55 mJ - 0.22 0.35 mJ - 0.62 0.9 mJ - 35 - ns - 25 - ns - 125 - ns - 50 - ns - 0.45 - mJ - 0.35 - mJ - 0.8 - mJ - 1700 2210 pF - 100 - pF - 65 - pF 10 - - s 2015. 8. 07 Revision No : 1 2/8 KGF20N60KDA ELECTRICAL CHARACTERISTIC OF DIODE CHARACTERISTIC Diode Forward Voltage Diode Reverse Recovery Time Diode Peak Reverse R.


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