KGF40N120KDA

SEMICONDUCTOR TECHNICAL DATA General Description KEC Field Stop Trench IGBTs offer low switching losses, high energy efficiency and short circuit ruggedness. It is designed for applications such as motor control, uninterrupted power supplies(UPS), general inverters. FEATURES High speed switching High system efficiency Short Circuit Withstand Times 10us Extremely enhanced avalanche capability KGF40N120KDA MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT Collector-Emitter Voltage VCES 1200 V Gate-Emitter Voltage VGES 20 V Collector Current @Tc=25 @Tc=100 80 A IC 40 A Pulsed Collector Current Diode Continuous Forward Current @Tc=100 ICM* 120 A IF 40 A Diode Maximum Forward Current IFM 160 A Maximum Power Dissipation @Tc=25 @Tc=100 357 W PD 140 W Maximum Junction Temperature Tj 150 Storage Temperature Range Tstg -55 to + 150 *Repetitive rating : Pulse width limited by max. junction temperature THERMAL CHARACTERISTIC CHARACTERISTIC Thermal Resistance, Junction to Case (IGBT) Thermal Resistance, Junction to Case (DIODE) Thermal Resistance, Junction to Ambient SYMBOL Rt h JC Rt h JC Rt h JA MAX. 0.35 1.1 40 UNIT /W /W /W E C G 2014. 8. 29 Revision No : 1 1/8 KGF40N120KDA ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Static Collector-Emitter Breakdown Voltage Collector Cut-off Current Gate Leakage Current Gate Threshold Voltage Collector-Emitter Saturation Voltage Dynamic Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Tu...