HIP2060

DATASHEET HIP2060 60V, 10A Half Bridge Power MOSFET Array Features Two 10A Power MOS N-Channel Transistors Output Voltage to 60V rDS(ON) . . . . . 0.135 Max Per Transistor at VGS = 15V rDS(ON) . . . . . . 0.15 Max Per Transistor at VGS = 10V Pulsed Current . . . . . . . . . . . . . . . 25A Each Transistor Avalanche Energy. . . . . . . . . . . 100mJ Each Transistor Grounded Tab Eliminates Heat Sink Isolation Ordering Information TEMP. PART NUMBER RANGE (oC) PACKAGE PKG. NO. HIP2060AS1 -40 to 125 5 Ld SIP Z5.067C HIP2060AS2 -40 to 125 5 Ld Gullwing SIP Z5.067A HIP2060AS3 -40 to 125 5 Ld SIP Z5.067B NOTE: When ordering use the entire part number. FN3983 Rev 5.00 April 1998 Description The HIP2060 is a power half-bridge MOSFET array that consists of two matched N-Channel enhancement-mode MOS transistors. The advanced Intersil PASIC2 process technology used in this product utilizes efficient geometries that provides outstanding device performance and ruggedness. The HIP2060 is designed to integrate two power devices in one chip thus providing board layout area and heat sink savings for applications such as Motor Controls, Uninterruptable Power Supplies, Switch Mode Power Supplies, Voice Coil Motors, and Class D Power Amplifier. Symbol DRAIN1 5 GATE1 1 Z1 GATE2 2 Z2 SOURCE2 3, TAB D1 SOURCE1 = DRAIN2 4 Packages JEDEC TS-001AA (ALTERNATE VERSION) HIP2060 AS1 54321 (TAB) Z5.067B (SIP) HIP2060 AS3 JEDEC MO-169 HIP2060 AS2 1 GATE1 2 GATE2 3 SOUR...