256K EEPROM
R1EV58256BxxN Series R1EV58256BxxR Series
256K EEPROM (32-Kword × 8-bit) Ready/Busy and RES function (R1EV58256BxxR)
Da...
Description
R1EV58256BxxN Series R1EV58256BxxR Series
256K EEPROM (32-Kword × 8-bit) Ready/Busy and RES function (R1EV58256BxxR)
Data Sheet
R10DS0208EJ0201 Rev.2.01
Apr. 01, 2020
Description
Renesas Electronics’ R1EV58256BxxN series and R1EV58256BxxR series are electrically erasable and programmable EEPROM’s organized as 32768-word 8-bit. They have realized high speed, low power consumption and high reliability by employing advanced MONOS memory technology and CMOS process and circuitry technology. They also have a 64-byte page programming function to make their write operations faster.
Features
Single supply: 2.7 to 5.5 V Access time:
85 ns (max)/100 ns (max) at 4.5 V VCC < 5.5 V 120 ns (max) at 2.7 V VCC 5.5 V Power dissipation: Active: 20 mW/MHz (typ) Standby: 110 W (max) On-chip latches: address, data, CE, OE, WE Automatic byte write: 10 ms (max) Automatic page write (64 bytes): 10 ms (max) Ready/Busy (only the R1EV58256BxxR series) Data polling and Toggle bit Data protection circuit on power on/off Conforms to JEDEC byte-wide standard Reliable CMOS with MONOS cell technology 105 or more erase/write cycles 10 or more years data retention Software data protection Write protection by RES pin (only the R1EV58256BxxR series) Temperature range: 40 to 85C There are lead free products.
R10DS0208EJ0201 Rev.2.01 Apr. 01, 2020
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R1EV58256BxxN Series/R1EV58256BxxR Series
Ordering Information
Orderable Part Name Access time
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