IGBT
1200V XPTTM GenX4TM IGBT
Ultra-Low Vsat PT IGBT for up to 5kHz Switching
IXYA20N120A4HV IXYP20N120A4
VCES = 1200V IC11...
Description
1200V XPTTM GenX4TM IGBT
Ultra-Low Vsat PT IGBT for up to 5kHz Switching
IXYA20N120A4HV IXYP20N120A4
VCES = 1200V IC110 = 20A VCE(sat) 1.9V tfi(typ) = 160ns
Symbol
VCES VCGR
VGES VGEM
IIICCC21M510
SSOA (RBSOA)
PC
TJ TJM Tstg
TL TSOLD
MFCd
Weight
Test Conditions
Maximum Ratings
TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M
Continuous Transient
1200 1200
±20 ±30
V V
V V
TC = 25°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 150°C, RG = 10 Clamped Inductive Load
TC = 25°C
80 20 135
ICM = 40
VCE 0.8 VCES
375
-55 ... +175 175
-55 ... +175
A A A A
W °C °C °C
Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s
300 °C 260 °C
Mounting Torque (TO-220) Mounting Force (TO-263HV)
1.13/10 10..65 / 22..14.6
Nm/lb.in N/lb
TO-263HV TO-220
2.5 g 3.0 g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVCES
IC = 250A, VGE = 0V
VGE(th)
IC = 250A, VCE = VGE
ICES VCE = VCES, VGE = 0V TJ = 150C
IGES VCE = 0V, VGE = 20V
VCE(sat)
IC
=
20A,
VGE
=
15V,
Note
1 TJ
=
150C
Characteristic Values Min. Typ. Max.
1200
V
4.0 6.5 V
25 A 5 mA
100 nA
1.65 1.94
1.90 V V
TO-263HV (IXYA..HV)
TO-220 (IXYP)
G E
C (Tab)
G CE
C (Tab)
G = Gate E = Emitter
D = Collector Tab = Collector
Features
Optimized for Low Conduction Losses Positive Thermal Coefficient of
Vce(sat) International Standard Packages
Advantages
High Power Density Low Gate Drive Requirement
Applications
Power Inverters UPS M...
Similar Datasheet
- IXYA20N120A4HV IGBT - IXYS