IXYP20N120B4

1200V XPTTM GenX4TM IGBT IXYA20N120B4HV IXYP20N120B4 Extreme Light Punch Throungh IGBT for up to 5 - 30kHz Switching VCES = 1200V IC110 = 20A VCE(sat)  2.1V tfi(typ) = 90ns Symbol VCES VCGR VGES VGEM IIICCC21M510 SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD MFCd Weight Test Conditions Maximum Ratings TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient 1200 1200 ±20 ±30 V V V V TTTCCC = 25°C = 110°C = 25°C, 1ms VGE = 15V, TVJ = 150°C, RG = 10 Clamped Inductive Load TC = 25°C 76 20 130 ICM = 40 VCE 0.8 VCES 375 -55 ... +175 175 -55 ... +175 A A A A W °C °C °C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s 300 °C 260 °C Mounting Torque (TO-220) Mounting Force (TO-263HV) 1.13/10 10..65 / 22..14.6 Nm/lb.in N/lb TO-263HV TO-220 2.5 g 3.0 g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVCES IC = 250A, VGE = 0V VGE(th) IC = 250A, VCE = VGE ICES VCE = VCES, VGE = 0V TJ = 150C IGES VCE = 0V, VGE = 20V VCE(sat) IC = 20A, VGE = 15V, Note 1 TJ = 150C Characteristic Values Min. Typ. Max. 1200 V 4.0 6.5 V 25 A 5 mA 100 nA 1.83 2.18 2.10 V V TO-263HV (IXYA..HV) TO-220 (IXYP) G E C (Tab) G C E C (Tab) G = Gate E = Emitter D = Collector Tab = Collector Features  Optimized for 5-30kHz Switching  Positive Thermal Coefficient of Vce(sat)  International Standard Packages Advantages  High Power Density  Low Gate Drive Requirement Applications  Power Inver...