N-Channel MOSFET
Elektronische Bauelemente
SSU89 10S-C
89A , 100V , RDS(O ) 9mΩ -Ch Enhancement Mode Power MOSFET
RoHS Compliant Produc...
Description
Elektronische Bauelemente
SSU89 10S-C
89A , 100V , RDS(O ) 9mΩ -Ch Enhancement Mode Power MOSFET
RoHS Compliant Product A suffix of “-C” specifies halogen free
DESCRIPTION
The SSU89N10S-C is the highest performance trench N-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications.
The SSU89N10S-C meet the RoHS and Green Product requirement with full function reliability approved.
TO-263
FEATURES
High Speed Power Switching Super Low Gate Charge Green Device Available
MARKING
89N10S
Date Code
PACKAGE INFORMATION
Package
MPQ
TO-263
0.8K
Leader Size 13 inch
ORDER INFORMATION
Part Number
Type
SSU89N10S-C Lead (Pb)-free and Halogen-free
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current 1 @VGS=10V
Pulsed Drain Current 2 Power Dissipation 3 Operating Junction and Storage Temperature
Thermal Resistance Junction-Ambient 1 Thermal Resistance Junction-Case 1
VDS
VGS
TC=25°C TC=100°C
ID
IDM
TC=25°C
PD
TJ, TSTG
Thermal Resistance Rating
RθJA RθJC
REF.
A b L4 C L3 L1 E
Millimeter Min. Max.
4.00 4.87 0.51 1.01 0.00 0.30 0.30 0.74
1.50 REF 2.5 REF 9.60 10.67
REF.
c2 b2 D e L L2
2
Drain
Millimeter Min. Max.
1.07 1.65 1.34 REF
8.0 9.65 2.54 REF
14.6 16.1 1.27 REF
1
Gate
3
Source
Rating 100 ±20 89 56 220 111.6
-55~150
Unit V V
A
A W °C
62 °C / W
1.12
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