DatasheetsPDF.com

SSG16P03-C

SeCoS

P-Channel MOSFET

Elektronische Bauelemente SSG16P03-C -16.5A , -30V , RDS(O ) 7.5mΩ P-Channel Enhancement Mode Power MOSFET RoHS Compli...


SeCoS

SSG16P03-C

File Download Download SSG16P03-C Datasheet


Description
Elektronische Bauelemente SSG16P03-C -16.5A , -30V , RDS(O ) 7.5mΩ P-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SSG16P03-C is the highest performance trench P-ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The SSG16P03-C meet the RoHS and Green Product requirement with full function reliability approved. FEATURES Lower Gate Charge Advanced high cell density Trench technology Green Device Available MARKING 16P03 = Date code PACKAGE INFORMATION Package MPQ SOP-8 2.5K Leader Size 13 inch SOP-8 B LD M A HG C JK F N E REF. A B C D E F G Millimeter Min. Max. 5.79 6.20 4.70 5.11 3.80 4.00 0° 8° 0.40 1.27 0.10 0.25 1.27 TYP. REF. H J K L M N Millimeter Min. Max. 0.33 0.51 0.375 REF. 45°REF. 1.3 1.752 0 0.25 0.25 REF. ORDER INFORMATION Part Number Type SSG16P03-C Lead (Pb)-free and Halogen-free SD SD SD GD ABSOLUTE MAXIMUM RATINGS Parameter Symbol Rating Drain-Source Voltage Gate-Source Voltage VDS -30 VGS ±20 Continuous Drain Current 1 @VGS=10V Pulsed Drain Current 2 Total Power Dissipation 3 TA=25°C TA=70°C TA=25°C ID IDM PD -16.5 -13 -60 3.1 Operating Junction & Storage Temperature TJ, TSTG Thermal Resistance Rating -55~150 Thermal Resistance Junction-Ambient 1 Thermal Resistance Junction-Case 1 RθJA RθJC t≦10sec, 40 Steady State, 105 24 Unit V V A A W °C °C/W ...




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)