P-Channel MOSFET
Elektronische Bauelemente
SSG16P03-C
-16.5A , -30V , RDS(O ) 7.5mΩ P-Channel Enhancement Mode Power MOSFET
RoHS Compli...
Description
Elektronische Bauelemente
SSG16P03-C
-16.5A , -30V , RDS(O ) 7.5mΩ P-Channel Enhancement Mode Power MOSFET
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SSG16P03-C is the highest performance trench P-ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications.
The SSG16P03-C meet the RoHS and Green Product requirement with full function reliability approved.
FEATURES
Lower Gate Charge Advanced high cell density Trench technology Green Device Available
MARKING
16P03
= Date code
PACKAGE INFORMATION
Package
MPQ
SOP-8
2.5K
Leader Size 13 inch
SOP-8
B
LD M
A HG
C
JK F
N E
REF.
A B C D E F G
Millimeter Min. Max.
5.79 6.20 4.70 5.11 3.80 4.00
0° 8° 0.40 1.27 0.10 0.25
1.27 TYP.
REF.
H J K L M N
Millimeter Min. Max.
0.33 0.51 0.375 REF.
45°REF. 1.3 1.752 0 0.25 0.25 REF.
ORDER INFORMATION
Part Number
Type
SSG16P03-C
Lead (Pb)-free and Halogen-free
SD SD SD GD
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Rating
Drain-Source Voltage Gate-Source Voltage
VDS -30 VGS ±20
Continuous Drain Current 1 @VGS=10V
Pulsed Drain Current 2 Total Power Dissipation 3
TA=25°C TA=70°C
TA=25°C
ID
IDM PD
-16.5 -13 -60 3.1
Operating Junction & Storage Temperature
TJ, TSTG Thermal Resistance Rating
-55~150
Thermal Resistance Junction-Ambient 1 Thermal Resistance Junction-Case 1
RθJA RθJC
t≦10sec, 40 Steady State, 105
24
Unit V V A A W °C
°C/W
...
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