N-Channel MOSFET
Elektronische Bauelemente
SSD3215B-C
6A, 150V, RDS(O ) 340mΩ -Ch Enhancement Mode Power MOSFET
RoHS Compliant Product ...
Description
Elektronische Bauelemente
SSD3215B-C
6A, 150V, RDS(O ) 340mΩ -Ch Enhancement Mode Power MOSFET
RoHS Compliant Product A suffix of “-C” specifies halogen free
DESCRIPTION
The SSD3215B-C is the highest performance trench N-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications.
The SSD3215B-C meet the RoHS and Green Product requirement with full function reliability approved.
FEATURES
Advanced High Cell Density Trench Technology Super Low Gate Charge Green Device Available
MARKING
3215B
= Date Code
PACKAGE INFORMATION
Package
MPQ
TO-252
2.5K
Leader Size 13 inch
ORDER INFORMATION
Part Number
Type
SSD3215B-C
Lead (Pb)-free and Halogen-free
TO-252(D-Pack)
A BC
D
GE
1
Gate
2
Drain
3
Source
K HF MJ
N O P
REF.
Millimeter Min. Max.
REF.
Millimeter Min. Max.
A 6.3 6.9 J
2.3 REF.
B 4.95 5.53 K 0.89 REF.
C 2.1 2.5 M 0.45 1.14
D 0.4 0.9 N 1.55 Typ.
E6
7.7 O 0 0.15
F 2.90 REF P 0.58 REF.
G 5.4 H 0.6
6.4 1.2
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain Current 1, @ VGS=10V
TC=100°C TA=25°C
ID
Pulsed Drain Current 3
TA=70°C
IDM
Total Power Dissipation
TC=25°C
PD
Operating Junction and Storage Temperature Range
TJ, TSTG
Thermal Resistance Ratings
Thermal Resistance Junction-Ambient 1 Thermal Resistance Junction-Ambient 2
RθJA
Thermal Resistance Junction-Case 1
RθJC
Rating...
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