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SSD3215B-C

SeCoS

N-Channel MOSFET

Elektronische Bauelemente SSD3215B-C 6A, 150V, RDS(O ) 340mΩ -Ch Enhancement Mode Power MOSFET RoHS Compliant Product ...


SeCoS

SSD3215B-C

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Description
Elektronische Bauelemente SSD3215B-C 6A, 150V, RDS(O ) 340mΩ -Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION The SSD3215B-C is the highest performance trench N-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The SSD3215B-C meet the RoHS and Green Product requirement with full function reliability approved. FEATURES Advanced High Cell Density Trench Technology Super Low Gate Charge Green Device Available MARKING 3215B = Date Code PACKAGE INFORMATION Package MPQ TO-252 2.5K Leader Size 13 inch ORDER INFORMATION Part Number Type SSD3215B-C Lead (Pb)-free and Halogen-free TO-252(D-Pack) A BC D GE 1 Gate 2 Drain 3 Source K HF MJ N O P REF. Millimeter Min. Max. REF. Millimeter Min. Max. A 6.3 6.9 J 2.3 REF. B 4.95 5.53 K 0.89 REF. C 2.1 2.5 M 0.45 1.14 D 0.4 0.9 N 1.55 Typ. E6 7.7 O 0 0.15 F 2.90 REF P 0.58 REF. G 5.4 H 0.6 6.4 1.2 ABSOLUTE MAXIMUM RATINGS Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current 1, @ VGS=10V TC=100°C TA=25°C ID Pulsed Drain Current 3 TA=70°C IDM Total Power Dissipation TC=25°C PD Operating Junction and Storage Temperature Range TJ, TSTG Thermal Resistance Ratings Thermal Resistance Junction-Ambient 1 Thermal Resistance Junction-Ambient 2 RθJA Thermal Resistance Junction-Case 1 RθJC Rating...




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