SDT1216

Elektronische Bauelemente SDT1216 -16A , -12V , RDS(ON) 21 m P-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SDT1216 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DFN2*2-6J package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. DFN2*2-6J FEATURES  Lower Gate Charge  Simple Drive Requirement  Fast Switching Characteristic MARKING 1216 PACKAGE INFORMATION Package MPQ DFN2*2-6L 3K Leader Size 7 inch REF. A B C D E F G Millimeter Min. Max. 1.924 2.076 1.924 2.076 0.46 0.66 0.65 TYP. 0.20 0.40 0.80 1.00 0.174 0.326 REF. H I J K L M Millimeter Min. Max. 0.20 - 0.85 1.05 0.70 0.90 0.20 0.40 0.203REF 0.00 0.05 Top View ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (t≤10s) Pulsed Drain Current 1 Power Dissipation@ TA = 25°C 2 Maximum Power Dissipation @TC= 25°C 3 Thermal Resistance Junction-Ambient 4 Thermal Resistance from Junction to Case 4 ID IDM PD RθJA RθJC Operating Junction & Storage Temperature TJ, TSTG Rating -12 ±8 -16 -65 2.5 18 50 6.9 150, -55~150 Unit V V A A W °C / W °C / W °C http://www.SeCoSGmbH.com/ 23-Nov-2016 Rev.B Any changes of specification will not ...