SID05N60J

Elektronische Bauelemente SID05N60J 5A, 600V, RDS(ON) 2.5 Ω N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION This advanced high voltage MOSFET is designed to stand huge energy in the avalanche mode and switch efficiently. This new device also offers a drain-to-source diode fast recovery time. Designed for high voltage, the device has high-speed switching applications such as power supplies, converters, power motor controls and bridge circuits. TO-251J FEATURES Lower RDS(on) High current rating Lower capacitance Lower total gate charge Avalanche energy specified MARKING CJD05N60B = Date Code MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Single Pulse Avalanche Energy 1 Total Power Dissipation Thermal Resistance from Junction to Ambient Maximum Lead Temperature for Soldering Purposes@ 5-second duration Operating Junction and Storage Temperature Range REF. A B C D E Millimeter Min. Max. 6.5 6.7 6 6.2 10.4 11 3.5 REF 0.46 0.58 REF. F G H I J Millimeter Min. Max. 0.66 0.86 2.2 2.4 0.46 0.58 2.186 2.386 0.86 1.16 2 Drain 1 Gate 3 Source Symbol VDS VGS ID IDM EAS PD RθJA TL TJ, TSTG Rating 600 ±30 5 20 250 1.25 100 260 -55 ~ 150 Unit V V A A mJ W °C / W °C °C http://www.SeCoSGmbH.com/ 13-Dec-2016 Rev. B Any changes of specification will not be informed individually. Page 1 of 3 Elektronis...