SSQF02N60J

Elektronische Bauelemente SSQF02N60J 2A, 600V, RDS(ON) 4.4Ω N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power suppliers, converters, and PWM motor controls, these devices are particularly well suited for bridge circuits whose diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients. ITO-220J FEATURES Robust high voltage termination Specified avalanche energy Source-to-drain diode recovery time comparable to a discrete fast recovery diode Diode is characterized for the use in bridge circuits IDSS and VDS(ON) are specified at the elevated temperature REF. A B C D E F G Millimeter Min. Max. 14.80 15.20 9.96 10.36 13.20 REF. 4.30 4.70 2.80 3.20 2.50 2.90 0.50 0.75 REF. H J K L M N 2 Drain Millimeter Min. Max. 3.60 4.00 1.30 REF. 0.50 0.75 2.54 REF. 2.70 REF. φ 3.5 REF. 1 Gate ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuo...