SGL40N150

SGL40N150 SGL40N150 IGBT General Description Fairchild’s Insulated Gate Bipolar Transistor (IGBT) provides low conduction and switching losses. The SGL40N150 is designed for induction heating applications. Features High speed switching Low saturation voltage : VCE(sat) = 3.7 V @ IC = 40A High input impedance Applications Home appliances, induction heaters, IH JAR, and microwave ovens. C G GC E TO-264 Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VCES VGES IC ICM (1) PD TJ Tstg TL Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current @ TC = 25°C @ TC = 100°C Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature @ TC = 25°C @ TC = 100°C Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature E SGL40N150 1500 ± 25 40 20 120 200 80 -55 to +150 -55 to +150 300 Thermal Characteristics Symbol RθJC(IGBT) RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Typ. --- Max. 0.625 25 Units V V A A A W W °C °C °C Units °C/W °C/W ©2002 Fairchild Semiconductor Corporation SGL40N150 Rev. A1 SGL40N150 Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVCES ICES IGES Collector-Emitter...