www.vishay.com
V10D100C
Vishay General Semiconductor
Dual High Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier
U...
www.vishay.com
V10D100C
Vishay General Semiconductor
Dual High Voltage TMBS® (Trench MOS Barrier
Schottky) Rectifier
Ultra Low VF = 0.48 V at IF = 2.5 A
eSMP® Series SMPD (TO-263AC)
K
1
2 Top View
Bottom View
V10D100C
Anode 1
K
FEATURES Trench MOS
Schottky technology generation 2 Available Very low profile - typical height of 1.7 mm Ideal for automated placement Low forward voltage drop, low power losses High efficiency operation Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C AEC-Q101 qualified available:
- Automotive ordering code: base P/NHM3 Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Anode 2
Cathode
LINKS TO ADDITIONAL RESOURCES
3D 3D
3D Models
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection in commercial, industrial, and automotive application.
PRIMARY CHARACTERISTICS
IF(AV) VRRM
2 x 5.0 A 100 V
IFSM
100 A
VF at IF = 5.0 A (TA = 125 °C)
0.60 V
TJ max. Package
150 °C SMPD (TO-263AC)
Circuit configuration
Common cathode
MECHANICAL DATA Case: SMPD (TO-263AC) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant Base P/NHM3 - halogen-free, RoHS-compliant, and AEC-Q101 qualified
Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 and HM3 suffix meets JESD 201 class 2 whisker test
Polarity: as marked
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