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V8PM10

Vishay

Trench MOS Barrier Schottky Rectifier

www.vishay.com V8PM10 Vishay General Semiconductor High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schott...


Vishay

V8PM10

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Description
www.vishay.com V8PM10 Vishay General Semiconductor High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.50 V at IF = 4 A eSMP® Series K 1 2 SMPC (TO-277A) K Cathode Anode 1 Anode 2 DESIGN SUPPORT TOOLS click logo to get started Models Available PRIMARY CHARACTERISTICS IF(AV) 8A VRRM 100 V IFSM 140 A VF at IF = 8 A (125 °C) TJ max. 0.60 V 175 °C Package SMPC (TO-277A) Circuit configuration Single FEATURES Very low profile - typical height of 1.1 mm Available Trench MOS Schottky technology Low forward voltage drop, low power losses High efficiency operation Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C AEC-Q101 qualified available - Automotive ordering code; base P/NHM3 Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in low voltage high frequency inverters, freewheeling, DC/DC converters, and polarity protection applications. MECHANICAL DATA Case: SMPC (TO-277A) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Base P/NHM3 - halogen-free, RoHS-compliant and AEC-Q101 qualified Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 and HM3 suffix meet JESD 201 class 2 whisker test MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL V8PM10 Device marking code 8M10 Maximum repetitive peak ...




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