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V15P12 Datasheet, Equivalent, Schottky Rectifier.

Trench MOS Barrier Schottky Rectifier

Trench MOS Barrier Schottky Rectifier

 

 

 

Part V15P12
Description Trench MOS Barrier Schottky Rectifier
Feature www.
vishay.
com V15P12 Vishay General Se miconductor High Current Density Surfa ce-Mount TMBS® (Trench MOS Barrier Sch ottky) Rectifier Ultra Low VF = 0.
45 V at IF = 5 A eSMP® Series K 1 2 SMPC (TO-277A) K Cathode Anode 1 Anode 2 FEATURES
• Very low profile - typica l height of 1.
1 mm Available
• Idea l for automated placement
• Trench M OS Schottky technology
• Low forward voltage drop, low power losses
• Hi gh efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
• AEC-Q101 qualified ava ilable - Automotive ordering code; base P/NHM3
• Material categorizat .
Manufacture Vishay
Datasheet
Download V15P12 Datasheet
Part V15P12
Description Trench MOS Barrier Schottky Rectifier
Feature www.
vishay.
com V15P12 Vishay General Se miconductor High Current Density Surfa ce-Mount TMBS® (Trench MOS Barrier Sch ottky) Rectifier Ultra Low VF = 0.
45 V at IF = 5 A eSMP® Series K 1 2 SMPC (TO-277A) K Cathode Anode 1 Anode 2 FEATURES
• Very low profile - typica l height of 1.
1 mm Available
• Idea l for automated placement
• Trench M OS Schottky technology
• Low forward voltage drop, low power losses
• Hi gh efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
• AEC-Q101 qualified ava ilable - Automotive ordering code; base P/NHM3
• Material categorizat .
Manufacture Vishay
Datasheet
Download V15P12 Datasheet

V15P12

V15P12
V15P12

V15P12

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