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V30D170C

Vishay

Trench MOS Barrier Schottky Rectifier

www.vishay.com V30D170C Vishay General Semiconductor Dual High Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier ...


Vishay

V30D170C

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www.vishay.com V30D170C Vishay General Semiconductor Dual High Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier eSMP® Series K 1 2 Top View Bottom View SMPD (TO-263AC) Anode 1 Anode 2 K Cathodde FEATURES Very low profile - typical height of 1.7 mm Available Low forward voltage drop, low power losses High efficiency operation Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C AEC-Q101 qualified available Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM 2 x 15.0 A 170 V 260 A VF at IF = 5.0 A (TA = 125 °C) 0.66 V TJ max. Package 175 °C SMPD (TO-263AC) Circuit configurations Common cathode MECHANICAL DATA Case: SMPD (TO-263AC) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Base P/NHM3 - halogen-free, RoHS-compliant, and AEC-Q101 qualified Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 and HM3 suffix meets JESD 201 class 2 whisker test Polarity: As marked MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL V30D170C Device marking code V30D170C Maximum repetitive peak reverse voltage VRRM 170 Maximum average forward rectified current (fig. 1) per device per d...




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