V20200G-E3, VF20200G-E3, VB20200G-E3, VI20200G-E3
www.vishay.com
Vishay General Semiconductor
Dual High Voltage Trenc...
V20200G-E3, VF20200G-E3, VB20200G-E3, VI20200G-E3
www.vishay.com
Vishay General Semiconductor
Dual High Voltage Trench MOS Barrier
Schottky Rectifier
Ultra Low VF = 0.62 V at IF = 5 A
TO-220AB
TMBS ®
ITO-220AB
V20200G
3 2 1
PIN 1
PIN 2
PIN 3
CASE
D2PAK (TO-263AB)
K
VF20200G 1 2 3
PIN 1
PIN 2
PIN 3
TO-262AA K
2
1 VB20200G
PIN 1
K
PIN 2
HEATSINK
DESIGN SUPPORT TOOLS
3 2 VI20200G 1
PIN 1
PIN 2
PIN 3
K
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Models
Available
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 10 A TJ max.
Package
2 x 10 A 200 V 110 A 0.71 V 150 °C
TO-220AB, ITO-220AB, D2PAK (TO-263AB), TO-262AA
Circuit configuration
Common cathode
FEATURES Trench MOS
Schottky technology Low forward voltage drop, low power losses High efficiency operation Low thermal resistance Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package) Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA package) Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery protection.
MECHANICAL DATA Case: TO-220AB, ITO-220AB, D2PAK (TO-263AB), and TO-262AA Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Terminals: matte tin plated leads, solderable per ...