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1N4150W-G

Vishay

Small Signal Fast Switching Diode

www.vishay.com 1N4150W-G Vishay Semiconductors Small Signal Fast Switching Diode FEATURES • Silicon epitaxial planar d...


Vishay

1N4150W-G

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www.vishay.com 1N4150W-G Vishay Semiconductors Small Signal Fast Switching Diode FEATURES Silicon epitaxial planar diode For general purpose and switching AEC-Q101 qualified available  (part number on request) Base P/N-G3 - green, commercial grade Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESIGN SUPPORT TOOLS click logo to get started Models Available MECHANICAL DATA Case: SOD-123 Weight: approx. 9.4 mg Packaging codes / options: 18/10K per 13" reel (8 mm tape), 10K/box 08/3K per 7" reel (8 mm tape), 15K/box PARTS TABLE PART ORDERING CODE 1N4150W-G 1N4150W-G3-18 or 1N4150W-G3-08 TYPE MARKING AM CIRCUIT CONFIGURATION Single REMARKS Tape and reel ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL Repetitive peak reverse voltage Maximum average forward rectified current Maximum power dissipation (1) VRRM IF(AV) Ptot VALUE 50 200 410 THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL Thermal resistance junction to ambient air (1) Maximum junction temperature Storage temperature range Operating temperature range RthJA Tj Tstg Top Note (1) Valid provided that electrodes are kept at ambient temperature VALUE 375 150 -65 to +150 -55 to +150 UNIT V mA mW UNIT K/W °C °C °C Rev. 1.1, 22-Feb-18 1 Document Number: 85888 For technical questions within your region: [email protected], DiodesAsia@vi...




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