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1N5059, 1N5060, 1N5061, 1N5062
Vishay Semiconductors
Standard Avalanche Sinterglass Diode
949539
DESIGN SUPPORT TOOLS click logo to get started
Models
Available
MECHANICAL DATA Case: SOD-57 Terminals: plated axial leads, solderable per MIL-STD-750, method 2026 Polarity: color band denotes cathode end Mounting position: any Weight: approx. 369 mg
FEATURES
• Glass passivated junction • Hermetically sealed axial-leaded glass
envelope • Controlled avalanche characteristics • Low reverse current • High surge current loading • Material categorization:
for definitions of compliance please see www.vishay.com/doc?99912
APPLICATIONS
• Rectification diode, general purpose
ORDERING INFORMATION (Example)
DEVICE NAME
ORDERING CODE
1N5062
1N5062TR
1N5062
1N5062TAP
TAPED UNITS 5000 per 10" tape and reel
5000 per ammopack
MINIMUM ORDER QUANTITY 25 000 25 000
PARTS TABLE
PART 1N5059 1N5060 1N5061 1N5062
TYPE DIFFERENTIATION VR = 200 V; IF(AV) = 2 A VR = 400 V; IF(AV) = 2 A VR = 600 V; IF(AV) = 2 A VR = 800 V; IF(AV) = 2 A
PACKAGE SOD-57 SOD-57 SOD-57 SOD-57
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART SYMBOL
Reverse voltage = repetitive peak reverse voltage See electrical characteristics
Peak forward surge current
Average forward current
Pulse energy in avalanche mode, non repetitive (inductive load switch off)
tp = 10 ms, half sine wave TthJA = 45 K/W, Tamb = 50 °C TthJA = 100 K/W, Tamb = 75 °C
I(BR)R = 1 A, inductive load
1N5059 1N5060 1N5061 1N5062
VR = VRRM VR = VRRM VR = VRRM VR = VRRM
IFSM IF(AV) IF(AV)
ER
Junction and storage temperature range
Tj = Tstg
VALUE 200 400 600 800 50 2 0.8
20
-55 to +175
UNIT V V V V A A A
mJ
°C
Rev. 1.7, 20-Feb-18
1
Document Number: 86000
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
1N5059, 1N5060, 1N5061, 1N5062
Vishay Semiconductors
MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Junction ambient
Lead length l = 10 mm, TL = constant On PC board with spacing 25 mm
RthJA RthJA
VALUE 45 100
UNIT K/W K/W
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART SYMBOL MIN.
Forward voltage Reverse current
Breakdown voltage Diode capacitance Reverse recovery time
IF = 1 A
VF
-
IF = 2.5 A
VF
-
VR = VRRM
IR
-
VR = VRRM, Tj = 100 °C
IR
-
VR = VRRM, Tj = 150 °C
IR
-
1N5059
V(BR)R
225
IR = 100 μA
1N5060 V(BR)R
450
1N5061 V(BR)R
650
1N5062 V(BR)R
900
VR = 0 V, f = 1 MHz
CD
-
IF = 0.5 A, IR = 1 A, iR = 0.25 A
trr
-
TYP. 40 -
MAX 1
1.15 1 10
100 1600 1600 1600 1600
4
UNIT V V μA μA μA V V V V pF μs
I FAV - Average Forward Current (A)
PR- Reverse Power Dissipation ( mW )
TYPICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified)
200
3.0
VR = VRRM
160
RthJA =
2.5
1N5062
45 K/W
2.0
120
100 K/W
1N5061
1.5
160 K/W
80
1N5060
1.0
VR = VRRM half sinewave
RthJA = 45 K/W l =10 mm
40
1N5059
0.5
RthJA = 100 K/W PCB: d = 25 mm
0 25 50 75 100 125 150 175
15764
Tj - Junction Temperature ( °C )
Fig. 1 - Max. Reverse Power Dissipation vs. Junction Temperature
0.0 0 20 40 60 80 100 120 140 160 180
15763_1
Tamb - Ambient Temperature (°C)
Fig. 3 - Max. Average Forward Current vs. Ambient Temperature
IR - Reverse Current ( µA )
1000 100
VR = VRRM
10
1
100 Tj = 175 °C
10 Tj = 25 °C
1 0.1
0.01
IF - Forward Current ( A )
0.1 25 50 75 100 125 150 175
15765
Tj - Junction Temperature ( °C )
Fig. 2 - Max. Reverse Current vs. Junction Temperature
0.001 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0
15762
VF - Forward Voltage ( V )
Fig. 4 - Max. Forward Current vs. Forward Voltage
Rev. 1.7, 20-Feb-18
2
Document Number: 86000
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
50 f =1 MHz
40
1N5059, 1N5060, 1N5061, 1N5062
Vishay Semiconductors
CD - Diode Capacitance ( pF )
30
20
10
0
0.1
1
10
100
15766
VR - Reverse Voltage ( V )
Fig. 5 - Diode Capacitance vs. Reverse Voltage
PACKAGE DIMENSIONS in millimeters (inches): SOD-57
0.82 (0.032) max.
3.6 (0.142) max.
20543
26 (1.024) min.
4 (0.157) max.
26 (1.024) min.
Rev. 1.7, 20-Feb-18
3
Document Number: 86000
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. .