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1N5060 Dataheets PDF



Part Number 1N5060
Manufacturers Vishay
Logo Vishay
Description Standard Avalanche Sinterglass Diode
Datasheet 1N5060 Datasheet1N5060 Datasheet (PDF)

www.vishay.com 1N5059, 1N5060, 1N5061, 1N5062 Vishay Semiconductors Standard Avalanche Sinterglass Diode 949539 DESIGN SUPPORT TOOLS click logo to get started Models Available MECHANICAL DATA Case: SOD-57 Terminals: plated axial leads, solderable per MIL-STD-750, method 2026 Polarity: color band denotes cathode end Mounting position: any Weight: approx. 369 mg FEATURES • Glass passivated junction • Hermetically sealed axial-leaded glass envelope • Controlled avalanche characteristics • Low r.

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www.vishay.com 1N5059, 1N5060, 1N5061, 1N5062 Vishay Semiconductors Standard Avalanche Sinterglass Diode 949539 DESIGN SUPPORT TOOLS click logo to get started Models Available MECHANICAL DATA Case: SOD-57 Terminals: plated axial leads, solderable per MIL-STD-750, method 2026 Polarity: color band denotes cathode end Mounting position: any Weight: approx. 369 mg FEATURES • Glass passivated junction • Hermetically sealed axial-leaded glass envelope • Controlled avalanche characteristics • Low reverse current • High surge current loading • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Rectification diode, general purpose           ORDERING INFORMATION (Example) DEVICE NAME ORDERING CODE 1N5062 1N5062TR 1N5062 1N5062TAP TAPED UNITS 5000 per 10" tape and reel 5000 per ammopack MINIMUM ORDER QUANTITY 25 000 25 000 PARTS TABLE PART 1N5059 1N5060 1N5061 1N5062 TYPE DIFFERENTIATION VR = 200 V; IF(AV) = 2 A VR = 400 V; IF(AV) = 2 A VR = 600 V; IF(AV) = 2 A VR = 800 V; IF(AV) = 2 A PACKAGE SOD-57 SOD-57 SOD-57 SOD-57 ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL Reverse voltage = repetitive peak reverse voltage See electrical characteristics Peak forward surge current Average forward current Pulse energy in avalanche mode, non repetitive (inductive load switch off) tp = 10 ms, half sine wave TthJA = 45 K/W, Tamb = 50 °C TthJA = 100 K/W, Tamb = 75 °C I(BR)R = 1 A, inductive load 1N5059 1N5060 1N5061 1N5062 VR = VRRM VR = VRRM VR = VRRM VR = VRRM IFSM IF(AV) IF(AV) ER Junction and storage temperature range Tj = Tstg VALUE 200 400 600 800 50 2 0.8 20 -55 to +175 UNIT V V V V A A A mJ °C Rev. 1.7, 20-Feb-18 1 Document Number: 86000 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com 1N5059, 1N5060, 1N5061, 1N5062 Vishay Semiconductors MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL Junction ambient Lead length l = 10 mm, TL = constant On PC board with spacing 25 mm RthJA RthJA VALUE 45 100 UNIT K/W K/W ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL MIN. Forward voltage Reverse current Breakdown voltage Diode capacitance Reverse recovery time IF = 1 A VF - IF = 2.5 A VF - VR = VRRM IR - VR = VRRM, Tj = 100 °C IR - VR = VRRM, Tj = 150 °C IR - 1N5059 V(BR)R 225 IR = 100 μA 1N5060 V(BR)R 450 1N5061 V(BR)R 650 1N5062 V(BR)R 900 VR = 0 V, f = 1 MHz CD - IF = 0.5 A, IR = 1 A, iR = 0.25 A trr - TYP. 40 - MAX 1 1.15 1 10 100 1600 1600 1600 1600 4 UNIT V V μA μA μA V V V V pF μs I FAV - Average Forward Current (A) PR- Reverse Power Dissipation ( mW ) TYPICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) 200 3.0 VR = VRRM 160 RthJA = 2.5 1N5062 45 K/W 2.0 120 100 K/W 1N5061 1.5 160 K/W 80 1N5060 1.0 VR = VRRM half sinewave RthJA = 45 K/W l =10 mm 40 1N5059 0.5 RthJA = 100 K/W PCB: d = 25 mm 0 25 50 75 100 125 150 175 15764 Tj - Junction Temperature ( °C ) Fig. 1 - Max. Reverse Power Dissipation vs. Junction Temperature 0.0 0 20 40 60 80 100 120 140 160 180 15763_1 Tamb - Ambient Temperature (°C) Fig. 3 - Max. Average Forward Current vs. Ambient Temperature IR - Reverse Current ( µA ) 1000 100 VR = VRRM 10 1 100 Tj = 175 °C 10 Tj = 25 °C 1 0.1 0.01 IF - Forward Current ( A ) 0.1 25 50 75 100 125 150 175 15765 Tj - Junction Temperature ( °C ) Fig. 2 - Max. Reverse Current vs. Junction Temperature 0.001 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 15762 VF - Forward Voltage ( V ) Fig. 4 - Max. Forward Current vs. Forward Voltage Rev. 1.7, 20-Feb-18 2 Document Number: 86000 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com 50 f =1 MHz 40 1N5059, 1N5060, 1N5061, 1N5062 Vishay Semiconductors CD - Diode Capacitance ( pF ) 30 20 10 0 0.1 1 10 100 15766 VR - Reverse Voltage ( V ) Fig. 5 - Diode Capacitance vs. Reverse Voltage PACKAGE DIMENSIONS in millimeters (inches): SOD-57 0.82 (0.032) max. 3.6 (0.142) max. 20543 26 (1.024) min. 4 (0.157) max. 26 (1.024) min. Rev. 1.7, 20-Feb-18 3 Document Number: 86000 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. .


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