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4N36M Dataheets PDF



Part Number 4N36M
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description Phototransistor Optocoupler
Datasheet 4N36M Datasheet4N36M Datasheet (PDF)

4NXXM, H11AXM General Purpose 6-Pin Phototransistor Optocouplers March 2007 4N25M, 4N26M, 4N27M, 4N28M, 4N35M, 4N36M, 4N37M, tm H11A1M, H11A2M, H11A3M, H11A4M, H11A5M General Purpose 6-Pin Phototransistor Optocouplers Features ■ UL recognized (File # E90700, Volume 2) ■ VDE recognized (File # 102497) – Add option V (e.g., 4N25VM) Applications ■ Power supply regulators ■ Digital logic inputs ■ Microprocessor inputs Description The general purpose optocouplers consist of a gallium arsenide infr.

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4NXXM, H11AXM General Purpose 6-Pin Phototransistor Optocouplers March 2007 4N25M, 4N26M, 4N27M, 4N28M, 4N35M, 4N36M, 4N37M, tm H11A1M, H11A2M, H11A3M, H11A4M, H11A5M General Purpose 6-Pin Phototransistor Optocouplers Features ■ UL recognized (File # E90700, Volume 2) ■ VDE recognized (File # 102497) – Add option V (e.g., 4N25VM) Applications ■ Power supply regulators ■ Digital logic inputs ■ Microprocessor inputs Description The general purpose optocouplers consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-pin dual in-line package. Functional Block Diagram 1 6 2 5 3 NC 4 PIN 1. ANODE 2. CATHODE 3. NO CONNECTION 4. EMITTER 5. COLLECTOR 6. BASE 6 1 6 1 6 1 ©2005 Fairchild Semiconductor Corporation 4NXXM, H11AXM Rev. 1.0.0 www.fairchildsemi.com 4NXXM, H11AXM General Purpose 6-Pin Phototransistor Optocouplers Absolute Maximum Ratings (TA = 25°C unless otherwise specified) Symbol Parameter TOTAL DEVICE TSTG TOPR TSOL PD Storage Temperature Operating Temperature Wave solder temperature (see page 8 for reflow solder profile) Total Device Power Dissipation @ TA = 25°C Derate above 25°C EMITTER IF VR IF(pk) PD DC/Average Forward Input Current Reverse Input Voltage Forward Current – Peak (300µs, 2% Duty Cycle) LED Power Dissipation @ TA = 25°C Derate above 25°C DETECTOR VCEO VCBO VECO PD Collector-Emitter Voltage Collector-Base Voltage Emitter-Collector Voltage Detector Power Dissipation @ TA = 25°C Derate above 25°C Value -55 to +150 -55 to +100 260 for 10 sec 250 2.94 60 6 3 120 1.41 30 70 7 150 1.76 Units °C °C °C mW mA V A mW mW/°C V V V mW mW/°C Electrical Characteristics (TA = 25°C unless otherwise specified) Individual Component Characteristics Symbol Parameter Test Conditions EMITTER VF IR DETECTOR Input Forward Voltage Reverse Leakage Current BVCEO BVCBO BVECO ICEO ICBO CCE Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Collector Breakdown Voltage Collector-Emitter Dark Current Collector-Base Dark Current Capacitance IF = 10mA VR = 6.0V IC = 1.0mA, IF = 0 IC = 100µA, IF = 0 IE = 100µA, IF = 0 VCE = 10V, IF = 0 VCB = 10V VCE = 0V, f = 1 MHz Min. Typ.* Max. Unit 1.18 1.50 V 0.001 10 µA 30 100 V 70 120 V 7 10 V 1 50 nA 20 nA 8 pF Isolation Characteristics Symbol Characteristic VISO RISO CISO Input-Output Isolation Voltage Isolation Resistance Isolation Capacitance *Typical values at TA = 25°C Test Conditions f = 60Hz, t = 1 sec VI-O = 500 VDC VI-O = &, f = 1MHz Min. Typ.* Max. 7500 1011 0.2 2 Units Vac(pk) Ω pF ©2005 Fairchild Semiconductor Corporation 4NXXM, H11AXM Rev. 1.0.0 2 www.fairchildsemi.com 4NXXM, H11AXM General Purpose 6-Pin Phototransistor Optocouplers Electrical Characteristics (Continued) (TA = 25°C unless otherwise specified) Transfer Characteristics Symbol Parameter Test Conditions Device Min. Typ.* Max. Unit DC CHARACTERISTICS CTR Current Transfer Ratio, IF = 10mA, VCE = 10V 4N35M, 4N36M, 100 % Collector to Emitter 4N37M H11A1M 50 H11A5M 30 4N25M, 4N26M 20 H11A2M, H11A3M 4N27M, 4N28M 10 H11A4M IF = 10mA, VCE = 10V, 4N35M, 4N36M, 40 TA = -55°C 4N37M IF = 10mA, VCE = 10V, 4N35M, 4N36M, 40 TA = +100°C 4N37M VCE (SAT) Collector-Emitter Saturation Voltage IC = 2mA, IF = 50mA 4N25M, 4N26M, 4N27M, 4N28M, 0.5 V IC = 0.5mA, IF = 10mA 4N35M, 4N36M, 0.3 4N37M H11A1M, H11A2M, 0.4 H11A3M, H11A4M, H11A5M AC CHARACTERISTICS TON Non-Saturated IF = 10mA, VCC = 10V, 4N25M, 4N26M, 2 µs Turn-on Time RL = 100Ω (Fig. 11) 4N27M, 4N28M, H11A1M, H11A2M, H11A3M, H11A4, H11A5M IC = 2mA, VCC = 10V, RL = 100Ω (Fig. 11) 4N35M, 4N36M, 4N37M 2 10 µs TOFF Turn-off Time IF = 10mA, VCC = 10V, 4N25M, 4N26M, 2 µs RL = 100Ω (Fig. 11) 4N27M, 4N28M, H11A1M, H11A2M, H11A3M, H11A4M, H11A5M IC = 2mA, VCC = 10V, RL = 100Ω (Fig. 11) 4N35M, 4N36M, 4N37M 2 10 * Typical values at TA = 25°C ©2005 Fairchild Semiconductor Corporation 4NXXM, H11AXM Rev. 1.0.0 3 www.fairchildsemi.com 4NXXM, H11AXM General Purpose 6-Pin Phototransistor Optocouplers Typical Performance Curves VF - FORWARD VOLTAGE (V) Fig. 1 LED Forward Voltage vs. Forward Current 1.8 1.7 1.6 1.5 1.4 TA = -55°C 1.3 TA = 25°C 1.2 TA = 100°C 1.1 1.0 1 10 100 IF - LED FORWARD CURRENT (mA) NORMALIZED CTR Fig. 3 Normalized CTR vs. Ambient Temperature 1.4 1.2 IF = 5 mA 1.0 IF = 10 mA 0.8 0.6 IF = 20 mA 0.4 0.2 -60 Normalized to IF = 10 mA TA = 25°C -40 -20 0 20 40 60 TA - AMBIENT TEMPERATURE (°C) 80 100 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 10 Fig. 5 CTR vs. RBE (Saturated) IF = 20 mA VCE= 0.3 V IF = 10 mA IF = 5 mA 100 1000 RBE- BASE RESISTANCE (k Ω) NORMALIZED CTR ( CTRRBE / CTRRBE(OPEN)) VCE (SAT) - COLLECTOR-EMITTER SATURATION VOLTAGE (V) NORMALIZED CTR ( CTRRBE / CTRRBE(OPEN)) NORMALIZED CTR Fig.2 Normalized CTR vs. Forward Current 1.6 VCE = 5.0V TA = .


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