Document
4NXXM, H11AXM General Purpose 6-Pin Phototransistor Optocouplers
March 2007
4N25M, 4N26M, 4N27M, 4N28M, 4N35M, 4N36M, 4N37M, tm
H11A1M, H11A2M, H11A3M, H11A4M, H11A5M General Purpose 6-Pin Phototransistor Optocouplers
Features
■ UL recognized (File # E90700, Volume 2) ■ VDE recognized (File # 102497)
– Add option V (e.g., 4N25VM)
Applications
■ Power supply regulators ■ Digital logic inputs ■ Microprocessor inputs
Description
The general purpose optocouplers consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-pin dual in-line package.
Functional Block Diagram
1
6
2
5
3
NC
4
PIN 1. ANODE 2. CATHODE 3. NO CONNECTION 4. EMITTER 5. COLLECTOR 6. BASE
6
1
6
1
6 1
©2005 Fairchild Semiconductor Corporation 4NXXM, H11AXM Rev. 1.0.0
www.fairchildsemi.com
4NXXM, H11AXM General Purpose 6-Pin Phototransistor Optocouplers
Absolute Maximum Ratings (TA = 25°C unless otherwise specified)
Symbol
Parameter
TOTAL DEVICE
TSTG TOPR TSOL
PD
Storage Temperature Operating Temperature Wave solder temperature (see page 8 for reflow solder profile) Total Device Power Dissipation @ TA = 25°C
Derate above 25°C
EMITTER
IF VR IF(pk) PD
DC/Average Forward Input Current Reverse Input Voltage Forward Current – Peak (300µs, 2% Duty Cycle) LED Power Dissipation @ TA = 25°C
Derate above 25°C
DETECTOR
VCEO VCBO VECO
PD
Collector-Emitter Voltage Collector-Base Voltage Emitter-Collector Voltage Detector Power Dissipation @ TA = 25°C
Derate above 25°C
Value
-55 to +150 -55 to +100 260 for 10 sec
250 2.94
60 6 3 120 1.41
30 70 7 150 1.76
Units
°C °C °C mW
mA V A mW mW/°C
V V V mW mW/°C
Electrical Characteristics (TA = 25°C unless otherwise specified)
Individual Component Characteristics
Symbol
Parameter
Test Conditions
EMITTER
VF IR DETECTOR
Input Forward Voltage Reverse Leakage Current
BVCEO BVCBO BVECO
ICEO ICBO CCE
Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Collector Breakdown Voltage Collector-Emitter Dark Current Collector-Base Dark Current Capacitance
IF = 10mA VR = 6.0V
IC = 1.0mA, IF = 0 IC = 100µA, IF = 0 IE = 100µA, IF = 0 VCE = 10V, IF = 0 VCB = 10V VCE = 0V, f = 1 MHz
Min. Typ.* Max. Unit
1.18 1.50
V
0.001 10
µA
30
100
V
70
120
V
7
10
V
1
50
nA
20
nA
8
pF
Isolation Characteristics
Symbol Characteristic
VISO RISO CISO
Input-Output Isolation Voltage Isolation Resistance Isolation Capacitance
*Typical values at TA = 25°C
Test Conditions
f = 60Hz, t = 1 sec VI-O = 500 VDC VI-O = &, f = 1MHz
Min. Typ.* Max.
7500 1011
0.2
2
Units
Vac(pk) Ω pF
©2005 Fairchild Semiconductor Corporation
4NXXM, H11AXM Rev. 1.0.0
2
www.fairchildsemi.com
4NXXM, H11AXM General Purpose 6-Pin Phototransistor Optocouplers
Electrical Characteristics (Continued) (TA = 25°C unless otherwise specified)
Transfer Characteristics
Symbol
Parameter
Test Conditions
Device
Min. Typ.* Max. Unit
DC CHARACTERISTICS
CTR Current Transfer Ratio, IF = 10mA, VCE = 10V
4N35M, 4N36M, 100
%
Collector to Emitter
4N37M
H11A1M
50
H11A5M
30
4N25M, 4N26M 20 H11A2M, H11A3M
4N27M, 4N28M 10 H11A4M
IF = 10mA, VCE = 10V, 4N35M, 4N36M, 40
TA = -55°C
4N37M
IF = 10mA, VCE = 10V, 4N35M, 4N36M, 40
TA = +100°C
4N37M
VCE (SAT) Collector-Emitter Saturation Voltage
IC = 2mA, IF = 50mA
4N25M, 4N26M, 4N27M, 4N28M,
0.5 V
IC = 0.5mA, IF = 10mA 4N35M, 4N36M,
0.3
4N37M
H11A1M, H11A2M,
0.4
H11A3M, H11A4M,
H11A5M
AC CHARACTERISTICS
TON Non-Saturated
IF = 10mA, VCC = 10V, 4N25M, 4N26M,
2
µs
Turn-on Time
RL = 100Ω (Fig. 11)
4N27M, 4N28M,
H11A1M, H11A2M,
H11A3M, H11A4,
H11A5M
IC = 2mA, VCC = 10V, RL = 100Ω (Fig. 11)
4N35M, 4N36M, 4N37M
2
10 µs
TOFF Turn-off Time
IF = 10mA, VCC = 10V, 4N25M, 4N26M,
2
µs
RL = 100Ω (Fig. 11)
4N27M, 4N28M, H11A1M, H11A2M,
H11A3M, H11A4M,
H11A5M
IC = 2mA, VCC = 10V, RL = 100Ω (Fig. 11)
4N35M, 4N36M, 4N37M
2
10
* Typical values at TA = 25°C
©2005 Fairchild Semiconductor Corporation
4NXXM, H11AXM Rev. 1.0.0
3
www.fairchildsemi.com
4NXXM, H11AXM General Purpose 6-Pin Phototransistor Optocouplers
Typical Performance Curves
VF - FORWARD VOLTAGE (V)
Fig. 1 LED Forward Voltage vs. Forward Current
1.8
1.7
1.6
1.5
1.4 TA = -55°C
1.3 TA = 25°C
1.2
TA = 100°C 1.1
1.0 1
10
100
IF - LED FORWARD CURRENT (mA)
NORMALIZED CTR
Fig. 3 Normalized CTR vs. Ambient Temperature
1.4
1.2 IF = 5 mA
1.0 IF = 10 mA
0.8
0.6
IF = 20 mA
0.4
0.2 -60
Normalized to
IF = 10 mA TA = 25°C
-40
-20
0
20
40
60
TA - AMBIENT TEMPERATURE (°C)
80
100
1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0
10
Fig. 5 CTR vs. RBE (Saturated)
IF = 20 mA
VCE= 0.3 V
IF = 10 mA
IF = 5 mA
100
1000
RBE- BASE RESISTANCE (k Ω)
NORMALIZED CTR ( CTRRBE / CTRRBE(OPEN))
VCE (SAT) - COLLECTOR-EMITTER SATURATION VOLTAGE (V)
NORMALIZED CTR ( CTRRBE / CTRRBE(OPEN))
NORMALIZED CTR
Fig.2 Normalized CTR vs. Forward Current
1.6
VCE = 5.0V TA = .