www.vishay.com
BAV19WS-G, BAV20WS-G, BAV21WS-G
Vishay Semiconductors
Small Signal Switching Diodes, High Voltage
DESIGN SUPPORT TOOLS click logo to get started
Models
Available
MECHANICAL DATA Case: SOD-323 Weight: approx. 4 mg Packaging codes / options: 18/10K per 13" reel (8 mm tape), 10K/box 08/3K per 7" reel (8 mm tape), 15K/box
FEATURES • Silicon epitaxial planar diodes • For general purpose • AEC-Q101 qualified • Base P/N-G3 - green, commercial grade • Base P/N-HG3 - green, AEC-Q101 qualified
(part number available on request) • Material categorization:
for definitions of compliance please see www.vishay.com/doc?99912
PARTS TABLE
PART
TYPE DIFFERENTIATION
BAV19WS-G BAV20WS-G BAV21WS-G
VR = 100 V VR = 150 V VR = 200 V
ORDERING CODE
BAV19WS-G3-08 or BAV19WS-G3-18 BAV20WS-G3-08 or BAV20WS-G3-18 BAV21WS-G3-08 or BAV21WS-G3-18
TYPE MARKING
AS AT AU
CIRCUIT CONFIGURATION
Single Single Single
REMARKS
Tape and reel Tape and reel Tape and reel
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
BAV19WS-G
Continuous reverse voltage
BAV20WS-G
BAV21WS-G
BAV19WS-G
Repetitive peak reverse voltage
BAV20WS-G
BAV21WS-G
Forward continuous current (1)
Rectified current (average) half wave rectification with resistive load (1)
Repetitive peak forward current (1)
f ≥ 50 Hz, θ = 180°
Surge forward current Power dissipation
t < 1 s, TJ = 25 °C
Note (1) Valid provided that leads are kept at ambient temperature
SYMBOL VR VR VR
VRRM VRRM VRRM
IF
IF(AV)
IFRM IFSM Ptot
VALUE 100 150 200 120 200 250 250
200
625 1
200
UNIT V V V V V V mA
mA
mA A mW
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Thermal resistance junction to ambient air
RthJA
Thermal resistance junction to lead
RthJL
Junction temperature
Tj
Storage temperature range
Tstg
Operating temperature range
Top
VALUE 625 450 150
-65 to +150 -55 to +150
UNIT K/W K/W °C °C °C
Rev. 1.7, 12-Jul-17
1
Document Number: 83423
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
BAV19WS-G, BAV20WS-G, BAV21WS-G
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL MIN.
Forward voltage
Reverse leakage current
Dynamic Forward resistance Diode capacitance Reverse recovery time
IF = 100 mA IF = 200 mA VR = 100 V VR = 100 V, Tj = 100 °C VR = 150 V VR = 150 V, Tj = 100 °C VR = 200 V VR = 200 V, Tj = 100 °C IF = 10 mA VR = 0 V, f = 1 MHz IF = 30 mA, IR = 30 mA, iR = 3 mA, RL = 100 Ω
VF
VF
BAV19WS-G
IR
BAV19WS-G
IR
BAV20WS-G
IR
BAV20WS-G
IR
BAV21WS-G
IR
BAV21WS-G
IR
rf
CD
trr
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
1000
250
100
Tj = 100 °C
200
TYP. 5
MAX. 1
1.25 100 15 100 15 100 15
1.5
50
UNIT V V nA μA nA μA nA μA Ω pF
ns
Ptot - Admissible Power Dissipation (mW)
I F - Forward Current (mA)
10
25 °C
150
1
100
0.1
0.01 0
18858
0.2
0.4
0.6
0.8
1
VF - Forward Voltage (V)
Fig. 1 - Forward Current vs. Forward Voltage
50
0 0 20 40 60 80 100 120 140 160 180 200
18864
Tamb - Ambient Temperature (°C)
Fig. 3 - Admissible Power Dissipation vs. Ambient Temperature
0.3
100
rf - Dynamic Forward Resistance (Ω)
IO , I F - Admissible Forward Current (A)
0.2 DC current IF
Current (rectif.) IO 0.1
0 0
18859
30
60
90
120 150
Tamb - Ambient Temperature (°C)
Fig. 2 - Admissible Forward Current vs. Ambient Temperature
10
1 1
18861
10
100
IF - Forward Current (mA)
Fig. 4 - Dynamic Forward Resistance vs. Forward Current
Rev. 1.7, 12-Jul-17
2
Document Number: 83423
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
BAV19WS-G, BAV20WS-G, BAV21WS-G
Vishay Semiconductors
1000
IR(Tj)/IR (25 °C) - Leakage Current
100
10
1
0.1 0
18862_2
Reverse Voltage
BAV19WS-G VR = 100 V BAV20WS-G VR = 150 V BAV21WS-G VR = 200 V
40
80
120
160
200
Tj - Junction Temperature (°C)
Fig. 5 - Leakage Current vs. Junction Temperature
PACKAGE DIMENSIONS in millimeters (inches): SOD-323
CD - Diode Capacitance (pF)
2.0 1.8 1.6
1.4 1.2
1.0 0.8 0.6 0.4 0.2
0 0.1
18863
Tj = 25 ° C
1
10
100
VR - Reverse Voltage (V)
Fig. 6 - Capacitance vs. Reverse Voltage
0.15 [0.006] 0.10 [0.004] 0° - 8° 0.1 [0.004] max.
1.15 [0.045] 0.8 [0.031] 0.2 [0.008]
0.40 [0.016] 0.25 [0.010]
Cathode bar
1.95 [0.077] 1.60 [0.063]
1.5 [0.059] 1.1 [0.043]
0.40 [0.016] 0.20 [0.0.