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BAV20WS-G Dataheets PDF



Part Number BAV20WS-G
Manufacturers Vishay
Logo Vishay
Description Small Signal Switching Diode
Datasheet BAV20WS-G DatasheetBAV20WS-G Datasheet (PDF)

www.vishay.com BAV19WS-G, BAV20WS-G, BAV21WS-G Vishay Semiconductors Small Signal Switching Diodes, High Voltage DESIGN SUPPORT TOOLS click logo to get started Models Available MECHANICAL DATA Case: SOD-323 Weight: approx. 4 mg Packaging codes / options: 18/10K per 13" reel (8 mm tape), 10K/box 08/3K per 7" reel (8 mm tape), 15K/box FEATURES • Silicon epitaxial planar diodes • For general purpose • AEC-Q101 qualified • Base P/N-G3 - green, commercial grade • Base P/N-HG3 - green, AEC-Q101 qu.

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www.vishay.com BAV19WS-G, BAV20WS-G, BAV21WS-G Vishay Semiconductors Small Signal Switching Diodes, High Voltage DESIGN SUPPORT TOOLS click logo to get started Models Available MECHANICAL DATA Case: SOD-323 Weight: approx. 4 mg Packaging codes / options: 18/10K per 13" reel (8 mm tape), 10K/box 08/3K per 7" reel (8 mm tape), 15K/box FEATURES • Silicon epitaxial planar diodes • For general purpose • AEC-Q101 qualified • Base P/N-G3 - green, commercial grade • Base P/N-HG3 - green, AEC-Q101 qualified (part number available on request) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PARTS TABLE PART TYPE DIFFERENTIATION BAV19WS-G BAV20WS-G BAV21WS-G VR = 100 V VR = 150 V VR = 200 V ORDERING CODE BAV19WS-G3-08 or BAV19WS-G3-18 BAV20WS-G3-08 or BAV20WS-G3-18 BAV21WS-G3-08 or BAV21WS-G3-18 TYPE MARKING AS AT AU CIRCUIT CONFIGURATION Single Single Single REMARKS Tape and reel Tape and reel Tape and reel ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL BAV19WS-G Continuous reverse voltage BAV20WS-G BAV21WS-G BAV19WS-G Repetitive peak reverse voltage BAV20WS-G BAV21WS-G Forward continuous current (1) Rectified current (average) half wave rectification with resistive load (1) Repetitive peak forward current (1) f ≥ 50 Hz, θ = 180° Surge forward current Power dissipation t < 1 s, TJ = 25 °C Note (1) Valid provided that leads are kept at ambient temperature SYMBOL VR VR VR VRRM VRRM VRRM IF IF(AV) IFRM IFSM Ptot VALUE 100 150 200 120 200 250 250 200 625 1 200 UNIT V V V V V V mA mA mA A mW THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL Thermal resistance junction to ambient air RthJA Thermal resistance junction to lead RthJL Junction temperature Tj Storage temperature range Tstg Operating temperature range Top VALUE 625 450 150 -65 to +150 -55 to +150 UNIT K/W K/W °C °C °C Rev. 1.7, 12-Jul-17 1 Document Number: 83423 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com BAV19WS-G, BAV20WS-G, BAV21WS-G Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL MIN. Forward voltage Reverse leakage current Dynamic Forward resistance Diode capacitance Reverse recovery time IF = 100 mA IF = 200 mA VR = 100 V VR = 100 V, Tj = 100 °C VR = 150 V VR = 150 V, Tj = 100 °C VR = 200 V VR = 200 V, Tj = 100 °C IF = 10 mA VR = 0 V, f = 1 MHz IF = 30 mA, IR = 30 mA, iR = 3 mA, RL = 100 Ω VF VF BAV19WS-G IR BAV19WS-G IR BAV20WS-G IR BAV20WS-G IR BAV21WS-G IR BAV21WS-G IR rf CD trr TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 1000 250 100 Tj = 100 °C 200 TYP. 5 MAX. 1 1.25 100 15 100 15 100 15 1.5 50 UNIT V V nA μA nA μA nA μA Ω pF ns Ptot - Admissible Power Dissipation (mW) I F - Forward Current (mA) 10 25 °C 150 1 100 0.1 0.01 0 18858 0.2 0.4 0.6 0.8 1 VF - Forward Voltage (V) Fig. 1 - Forward Current vs. Forward Voltage 50 0 0 20 40 60 80 100 120 140 160 180 200 18864 Tamb - Ambient Temperature (°C) Fig. 3 - Admissible Power Dissipation vs. Ambient Temperature 0.3 100 rf - Dynamic Forward Resistance (Ω) IO , I F - Admissible Forward Current (A) 0.2 DC current IF Current (rectif.) IO 0.1 0 0 18859 30 60 90 120 150 Tamb - Ambient Temperature (°C) Fig. 2 - Admissible Forward Current vs. Ambient Temperature 10 1 1 18861 10 100 IF - Forward Current (mA) Fig. 4 - Dynamic Forward Resistance vs. Forward Current Rev. 1.7, 12-Jul-17 2 Document Number: 83423 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com BAV19WS-G, BAV20WS-G, BAV21WS-G Vishay Semiconductors 1000 IR(Tj)/IR (25 °C) - Leakage Current 100 10 1 0.1 0 18862_2 Reverse Voltage BAV19WS-G VR = 100 V BAV20WS-G VR = 150 V BAV21WS-G VR = 200 V 40 80 120 160 200 Tj - Junction Temperature (°C) Fig. 5 - Leakage Current vs. Junction Temperature PACKAGE DIMENSIONS in millimeters (inches): SOD-323 CD - Diode Capacitance (pF) 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.1 18863 Tj = 25 ° C 1 10 100 VR - Reverse Voltage (V) Fig. 6 - Capacitance vs. Reverse Voltage 0.15 [0.006] 0.10 [0.004] 0° - 8° 0.1 [0.004] max. 1.15 [0.045] 0.8 [0.031] 0.2 [0.008] 0.40 [0.016] 0.25 [0.010] Cathode bar 1.95 [0.077] 1.60 [0.063] 1.5 [0.059] 1.1 [0.043] 0.40 [0.016] 0.20 [0.0.


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