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BAV21WS-G

Taiwan Semiconductor

Switching Diode

Small Signal Product BAV19WS-G/BAV20WS-G/BAV21WS-G Taiwan Semiconductor 200mA, 120V - 250V Switching Diodes FEATURES -...


Taiwan Semiconductor

BAV21WS-G

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Description
Small Signal Product BAV19WS-G/BAV20WS-G/BAV21WS-G Taiwan Semiconductor 200mA, 120V - 250V Switching Diodes FEATURES - Fast Switching Speed - Surface Mount Package Ideally Suited For Automatic Insertion - High Conductance - Packing code with suffix "G" means green compound (halogen-free) - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 SOD-323 APPLICATION Surface mount fast switching diode General purpose small signal switching MECHANICAL DATA - Case: SOD-323 small outline plastic package - Moisture sensitivity level 1 - Polarity: Indicated by cathode band - Weight: 4.36 ± 0.5 mg MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) PARAMETER SYMBOL BAV19WS-G BAV20WS-G BAV21WS-G Average Rectified Output Current Repetitive Peak Reverse Voltage DC Reverse Voltage IO 200 VRRM 120 200 250 VR 100 150 200 Non-Repetitive Peak Forward Surge Current Pulse Width = 1 μs Pulse Width = 1 s IFSM 2.5 0.5 Repetitive Peak Forward Surge Current Power Dissipation Thermal Resistance Junction to Ambient Junction and Storage Temperature Range IFRM PD RθJA TJ , TSTG 625 200 625 -65 to 150 UNIT mA V V A mA mW °C/W °C PARAMETER SYMBOL MIN Breakdown Voltage (Note 1) BAV19WS-G BAV20WS-G BAV21WS-G 120 V(BR)R 200 250 Forward Voltage IF=100mA IF=200mA - VF - Reverse Leakage Current (Note 2) BAV19WS-G BAV20WS-G IR - BAV21WS-G Junction Capacitance VR=0, f=1.0MHz ...




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