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SIGC08T60SE Dataheets PDF



Part Number SIGC08T60SE
Manufacturers Infineon
Logo Infineon
Description IGBT
Datasheet SIGC08T60SE DatasheetSIGC08T60SE Datasheet (PDF)

IGBT TRENCHSTOPTM IGBT3 Chip SIGC08T60SE Data Sheet Industrial Power Control SIGC08T60SE Table of Contents Features and Applications..3 Mechanical Parameters..3 Maximum Ratings ...

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IGBT TRENCHSTOPTM IGBT3 Chip SIGC08T60SE Data Sheet Industrial Power Control SIGC08T60SE Table of Contents Features and Applications...............................................................................................................................3 Mechanical Parameters....................................................................................................................................3 Maximum Ratings .............................................................................................................................................4 Static and Electrical Characteristics ..............................................................................................................4 Further Electrical Characteristics ...................................................................................................................5 Chip Drawing.....................................................................................................................................................6 Revision History ...............................................................................................................................................7 Relevant Application Notes .............................................................................................................................7 Legal Disclaimer ...............................................................................................................................................8 L7531N, L7531U 2 Rev. 2.1, 20.07.2017 SIGC08T60SE TRENCHSTOPTM IGBT3 Chip Features:  600V trench & field stop technology  Low VCEsat  Low turn-off losses  Short tail current  Positive temperature coefficient  Easy paralleling Recommended for:  Power modules  Discrete components Applications:  Drives  White goods  Resonant applications Chip Type SIGC08T60SE VCE 600V ICn 15A Die Size 2.86mm x 2.82mm Package Sawn on foil Mechanical Parameters Die size Emitter pad size Gate pad size Area total Silicon thickness Wafer size Maximum possible chips per wafer Passivation frontside Pad metal Backside metal Die bond Wire bond Reject ink dot size for original and Storage environment sealed MBB bags (<6 months) for open MBB bags 2.86 x 2.82 See chip drawing 0.36 x 0.51 mm2 8.07 70 µm 200 mm 3449 Photoimide 3200nm AlSiCu Ni Ag – system To achieve a reliable solder connection it is strongly recommended not to consume the Ni layer completely during production process Electrically conductive epoxy glue and soft solder Al, ≤500µm  0.65mm; max. 1.2mm Ambient atmosphere air, temperature 17°C – 25°C Acc. IEC 62258-3; Section 9.4 Storage Environment. L7531N, L7531U 3 Rev. 2.1, 20.07.2017 SIGC08T60SE Maximum Ratings In general, from reliability and lifetime point of view, the lower the operation junction temperature and/or the applied voltage, the greater the expected lifetime of any semiconductor device. Parameter Symbol Value Unit Collector-emitter voltage, Tvj=25C DC collector current, limited by Tvj max 1 Pulsed collector current, tp limited by Tvj max 2 Gate-emitter voltage Virtual junction temperature Short circuit data 1 / 2 / 3 VGE=15V, VCC=360V, Tvj=150°C Reverse bias safe operating area (RBSOA) 2 VCE 600 V IC - A IC,puls 45 A VGE 20 V Tvj -40 ... +175 °C tsc 5 µs IC,max = 30A, VCEmax = 600V, Tvj 150°C Static Characteristics (tested on wafer), Tvj=25C Parameter Symbol Collector-emitter breakdown voltage Collector-emitter saturation voltage Gate-emitter threshold voltage Zero gate voltage collector current Gate-emitter leakage current Integrated gate resistor V(BR)CES VCEsat VGE(th) ICES IGES rG Conditions VGE=0V, IC=2mA VGE=15V, IC=15A IC=210µA, VGE=VCE VCE=600V, VGE=0V VCE=0V, VGE=20V Value Unit min. typ. max. 600 - - - 1.5 2.05 V 4.1 4.9 5.7 - - 0.85 µA - - 300 nA none  Electrical Characteristics 2 Parameter Input capacitance Output capacitance Reverse transfer capacitance Symbol Cies Coes Cres Conditions VCE=25V, VGE=0V, f=1MHz Tvj=25C Value Unit min. typ. max. - 860 - - 55 - pF - 24 - 1 Depending on thermal properties of assembly. 2 Not subject to production test - verified by design/characterization. 3 Allowed number of short circuits: <1000; time between short circuits: >1s. L7531N, L7531U 4 Rev. 2.1, 20.07.2017 SIGC08T60SE Further Electrical Characteristics Switching characteristics and thermal properties are depending strongly on module design and mounting technology and can therefore not be specified for a bare die. Application example IGP15N60T Rev. 2.4 L7531N, L7531U 5 Rev. 2.1, 20.07.2017 Chip Drawing SIGC08T60SE E G E = Emitter G = Gate L7531N, L7531U 6 Rev. 2.1, 20.07.2017 SIGC08T60SE Bare Die Product Specifics Test coverage at wafer level cannot cover all application conditions. Therefore it is recommended to test all characteristics which .


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