Document
IGBT
TRENCHSTOPTM IGBT3 Chip
SIGC08T60SE
Data Sheet Industrial Power Control
SIGC08T60SE
Table of Contents
Features and Applications...............................................................................................................................3 Mechanical Parameters....................................................................................................................................3 Maximum Ratings .............................................................................................................................................4 Static and Electrical Characteristics ..............................................................................................................4 Further Electrical Characteristics ...................................................................................................................5 Chip Drawing.....................................................................................................................................................6 Revision History ...............................................................................................................................................7 Relevant Application Notes .............................................................................................................................7 Legal Disclaimer ...............................................................................................................................................8
L7531N, L7531U
2
Rev. 2.1, 20.07.2017
SIGC08T60SE
TRENCHSTOPTM IGBT3 Chip
Features:
600V trench & field stop technology Low VCEsat Low turn-off losses Short tail current Positive temperature coefficient Easy paralleling
Recommended for: Power modules Discrete components
Applications: Drives White goods Resonant applications
Chip Type SIGC08T60SE
VCE 600V
ICn 15A
Die Size 2.86mm x 2.82mm
Package Sawn on foil
Mechanical Parameters Die size Emitter pad size Gate pad size Area total Silicon thickness Wafer size Maximum possible chips per wafer Passivation frontside Pad metal
Backside metal
Die bond Wire bond Reject ink dot size
for original and Storage environment sealed MBB bags (<6 months)
for open MBB bags
2.86 x 2.82
See chip drawing 0.36 x 0.51
mm2
8.07
70
µm
200
mm
3449
Photoimide
3200nm AlSiCu
Ni Ag – system To achieve a reliable solder connection it is strongly recommended not to consume the Ni layer completely during
production process
Electrically conductive epoxy glue and soft solder
Al, ≤500µm
0.65mm; max. 1.2mm
Ambient atmosphere air, temperature 17°C – 25°C
Acc. IEC 62258-3; Section 9.4 Storage Environment.
L7531N, L7531U
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Rev. 2.1, 20.07.2017
SIGC08T60SE
Maximum Ratings
In general, from reliability and lifetime point of view, the lower the operation junction temperature and/or the applied voltage, the greater the expected lifetime of any semiconductor device.
Parameter
Symbol
Value
Unit
Collector-emitter voltage, Tvj=25C DC collector current, limited by Tvj max 1 Pulsed collector current, tp limited by Tvj max 2 Gate-emitter voltage Virtual junction temperature Short circuit data 1 / 2 / 3 VGE=15V, VCC=360V, Tvj=150°C Reverse bias safe operating area (RBSOA) 2
VCE
600
V
IC
-
A
IC,puls
45
A
VGE
20
V
Tvj
-40 ... +175
°C
tsc
5
µs
IC,max = 30A, VCEmax = 600V, Tvj 150°C
Static Characteristics (tested on wafer), Tvj=25C
Parameter
Symbol
Collector-emitter breakdown voltage Collector-emitter saturation voltage Gate-emitter threshold voltage Zero gate voltage collector current Gate-emitter leakage current Integrated gate resistor
V(BR)CES VCEsat VGE(th) ICES IGES
rG
Conditions
VGE=0V, IC=2mA VGE=15V, IC=15A IC=210µA, VGE=VCE VCE=600V, VGE=0V VCE=0V, VGE=20V
Value
Unit
min. typ. max.
600 -
-
-
1.5 2.05 V
4.1 4.9 5.7
-
- 0.85 µA
-
- 300 nA
none
Electrical Characteristics 2 Parameter
Input capacitance Output capacitance Reverse transfer capacitance
Symbol
Cies Coes Cres
Conditions
VCE=25V, VGE=0V, f=1MHz
Tvj=25C
Value Unit
min. typ. max. - 860 -
-
55
- pF
-
24
-
1 Depending on thermal properties of assembly. 2 Not subject to production test - verified by design/characterization. 3 Allowed number of short circuits: <1000; time between short circuits: >1s.
L7531N, L7531U
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Rev. 2.1, 20.07.2017
SIGC08T60SE
Further Electrical Characteristics
Switching characteristics and thermal properties are depending strongly on module design and mounting technology and can therefore not be specified for a bare die.
Application example
IGP15N60T
Rev. 2.4
L7531N, L7531U
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Rev. 2.1, 20.07.2017
Chip Drawing
SIGC08T60SE
E G
E = Emitter G = Gate
L7531N, L7531U
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Rev. 2.1, 20.07.2017
SIGC08T60SE
Bare Die Product Specifics Test coverage at wafer level cannot cover all application conditions. Therefore it is recommended to test all characteristics which .