SIGC42T60SNC

IGBT Chip in NPT-technology FEATURES: 600V NPT technology 100µm chip positive temperature coefficient easy paralleling SIGC42T60SNC This chip is used for: IGBT-Modules Applications: drives C G E Chip Type SIGC42T60SNC SIGC42T60SNC VCE ICn Die Size 600V 50A 6.5 x 6.5 mm2 600V 50A 6.5 x 6.5 mm2 Package Ordering Code sawn on foil unsawn Q67050-A4181A001 Q67050-A4181A002 MECHANICAL PARAMETER: Raster size Area total / active Emitter pad size Gate pad size Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 6.5 x 6.5 mm2 42.25 / 35.6 2x( 3.0x2.85 ) 0.8 x 1.5 100 µm 150 mm 90 deg 334 Photoimide 3200 nm Al Si 1% 1400 nm Ni Ag –system suitable for epoxy and soft solder die bonding electrically conductive glue or solder Al, ≤500µm ∅ 0.65mm ; max 1.2mm store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C Edited by INFINEON Technologies AI PS DD HV3, L 7272-S, Edition 2, 28.11.2003 SIGC42T60SNC MAXIMUM RATINGS: Parameter Symbol Value Unit Collector-emitter voltage, Tj=25 °C VCE 600 V DC collector current, limited by Tjmax IC 1) A Pulsed collector current, tp limited by Tjmax Icpuls 150 A Gate emitter voltage VGE ±20 V Operating junction and storage temperature 1 ) depending on thermal properties of assembly Tj, Tstg -55 ... +150 °C ...