IGBT
IGC07R60DE
TRENCHSTOPTM RC-Series for hard switching applications
IGBT chip with monolithically integrated diode in pac...
Description
IGC07R60DE
TRENCHSTOPTM RC-Series for hard switching applications
IGBT chip with monolithically integrated diode in packages offering space saving advantage
Features: TRENCHSTOPTM Reverse Conducting (RC) technology for 600V applications offering: Optimised VCEsat and VF for low conduction losses Smooth switching performance leading to low EMI levels Very tight parameter distribution Operating range of 1 to 20kHz Maximum junction temperature 175°C
Short circuit capability of 5μs Best in class current versus package size performance Qualified according to JEDEC for target applications Complete product spectrum and PSpice Models:
http://www.infineon.com/igbt/
Applications: Motor drives
Used for: Discrete components and molded modules
Chip Type IGC07R60DE
VCE 600V
ICn 10A
Die Size 2.65 x 2.68 mm2
Package sawn on foil
Mechanical Parameters Raster size Emitter pad size Gate pad size Area: total / active IGBT / active Diode Thickness Wafer size Max.possible chips per wafer Passivation frontside Pad metal Backside metal
Die bond
Wire bond Reject ink dot size
for original and sealed MBB bags Storage environment for open MBB bags
2.65 x 2.68
see chip drawing see chip drawing
mm2
7.102 / 3.647 / 0.871
70
µm
200
mm
3920
Photoimide
3200 nm AlSiCu
Ni Ag –system
Electrically conductive epoxy glue and soft solder (temperature budget: 290°C for 1min. or 260°C for 1.5min.)
Al, <350µm
0.65mm ; max 1.2mm
Ambient atmosphere air, Temperature 17°C – 25°C,...
Similar Datasheet
- IGC07R60DE IGBT - Infineon