Document
SIGC07T60UN
High Speed IGBT Chip in NPT-technology
FEATURES:
• low Eoff • 600V NPT technology • 100µm chip • short circuit prove • positive temperature coefficient • easy paralleling
This chip is used for: • SKB06N60HS
Applications: • Welding • PFC • UPS
C G
E
Chip Type SIGC07T60UN
VCE
ICn
600V 6A
Die Size 2.6 x 2.6 mm2
Package Ordering Code
sawn on foil
Q67050-A4220A101
MECHANICAL PARAMETER: Raster size Area total / active Emitter pad size Gate pad size Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Emitter metallization
Collector metallization
Die bond Wire bond Reject Ink Dot Size
Recommended Storage Environment
2.6 x 2.6
mm2
6.8 / 4.1
1.78 x 1.1
0.499 x 0.699
100
µm
150
mm
180
deg
2292
Photoimide
3200 nm Al Si 1%
1400 nm Ni Ag –system suitable for epoxy and soft solder die bonding
electrically conductive glue or solder
Al, ≤500µm
∅ 0.65mm ; max 1.2mm
store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C
Edited by INFINEON Technologies AI PS DD HV3, L 7212U, Edition 2, 28.11.2003
SIGC07T60UN
MAXIMUM RATINGS:
Parameter
Symbol
Value
Unit
Collector-emitter voltage, Tj=25 °C
VCE
600
V
DC collector current, limited by Tjmax
IC
1)
A
Pulsed collector current, tp limited by Tjmax
Icpuls
18
A
Gate emitter voltage
VGE
±20
V
Operating junction and storage temperature 1 ) depending on thermal properties of assembly
Tj, Tstg
-55 ... +150
°C
STATIC CHARACTERISTICS (tested on chip), Tj=25 °C, unless otherwise specified:
Parameter
Symbol
Conditions
Value Unit
min. typ. max.
Collector-emitter breakdown voltage Collector-emitter saturation voltage Gate-emitter threshold voltage Zero gate voltage collector current Gate-emitter leakage current
V(BR)CES
VGE=0V, IC=500µA
600
VCE(sat)
VGE=15V, IC=6A
2.8 3.15 V
VGE(th)
IC=200µA, VGE=VCE
3
4
5
ICES
VCE=600V, VGE=0V
0.7 µA
IGES
VCE=0V, VGE=20V
100 nA
DYNAMIC CHARACTERISTICS (tested at component):
Parameter
Symbol
Conditions
Input capacitance Output capacitance Reverse transfer capacitance
Ci s s Co s s Cr s s
V C E= 2 5 V VGE=0V f=1MHz
min. -
Value typ. max.
350
Unit pF
-
50
-
23
SWITCHING CHARACTERISTICS (tested at component), Inductive Load:
Parameter
Symbol
Conditions 2 )
Turn-on delay time Rise time Turn-off delay time Fall time
td(on) tr td(off) tf
Tj=150°C VCC=400V IC=6A VGE=+15/0V RG= 8Ω
2 ) values also influenced by parasitic L- and C- in measurement and package.
min. -
Value typ. max.
8
Unit ns
-
3
-
63
-
59
Edited by INFINEON Technologies AI PS DD HV3, L 7212U, Edition 2, 28.11.2003
CHIP DRAWING:
SIGC07T60UN
Edited by INFINEON Technologies AI PS DD HV3, L 7212U, Edition 2, 28.11.2003
FURTHER ELECTRICAL CHARACTERISTICS:
This chip data sheet refers to the device data sheet
SIGC07T60UN
SKB06N60HS
Package :TO220
Description: AQL 0,65 for visual inspection according to failure catalog Electrostatic Discharge Sensitive Devi.