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SIGC07T60UN Dataheets PDF



Part Number SIGC07T60UN
Manufacturers Infineon
Logo Infineon
Description IGBT
Datasheet SIGC07T60UN DatasheetSIGC07T60UN Datasheet (PDF)

SIGC07T60UN High Speed IGBT Chip in NPT-technology FEATURES: • low Eoff • 600V NPT technology • 100µm chip • short circuit prove • positive temperature coefficient • easy paralleling This chip is used for: • SKB06N60HS Applications: • Welding • PFC • UPS C G E Chip Type SIGC07T60UN VCE ICn 600V 6A Die Size 2.6 x 2.6 mm2 Package Ordering Code sawn on foil Q67050-A4220A101 MECHANICAL PARAMETER: Raster size Area total / active Emitter pad size Gate pad size Thickness Wafer size Flat po.

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SIGC07T60UN High Speed IGBT Chip in NPT-technology FEATURES: • low Eoff • 600V NPT technology • 100µm chip • short circuit prove • positive temperature coefficient • easy paralleling This chip is used for: • SKB06N60HS Applications: • Welding • PFC • UPS C G E Chip Type SIGC07T60UN VCE ICn 600V 6A Die Size 2.6 x 2.6 mm2 Package Ordering Code sawn on foil Q67050-A4220A101 MECHANICAL PARAMETER: Raster size Area total / active Emitter pad size Gate pad size Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 2.6 x 2.6 mm2 6.8 / 4.1 1.78 x 1.1 0.499 x 0.699 100 µm 150 mm 180 deg 2292 Photoimide 3200 nm Al Si 1% 1400 nm Ni Ag –system suitable for epoxy and soft solder die bonding electrically conductive glue or solder Al, ≤500µm ∅ 0.65mm ; max 1.2mm store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C Edited by INFINEON Technologies AI PS DD HV3, L 7212U, Edition 2, 28.11.2003 SIGC07T60UN MAXIMUM RATINGS: Parameter Symbol Value Unit Collector-emitter voltage, Tj=25 °C VCE 600 V DC collector current, limited by Tjmax IC 1) A Pulsed collector current, tp limited by Tjmax Icpuls 18 A Gate emitter voltage VGE ±20 V Operating junction and storage temperature 1 ) depending on thermal properties of assembly Tj, Tstg -55 ... +150 °C STATIC CHARACTERISTICS (tested on chip), Tj=25 °C, unless otherwise specified: Parameter Symbol Conditions Value Unit min. typ. max. Collector-emitter breakdown voltage Collector-emitter saturation voltage Gate-emitter threshold voltage Zero gate voltage collector current Gate-emitter leakage current V(BR)CES VGE=0V, IC=500µA 600 VCE(sat) VGE=15V, IC=6A 2.8 3.15 V VGE(th) IC=200µA, VGE=VCE 3 4 5 ICES VCE=600V, VGE=0V 0.7 µA IGES VCE=0V, VGE=20V 100 nA DYNAMIC CHARACTERISTICS (tested at component): Parameter Symbol Conditions Input capacitance Output capacitance Reverse transfer capacitance Ci s s Co s s Cr s s V C E= 2 5 V VGE=0V f=1MHz min. - Value typ. max. 350 Unit pF - 50 - 23 SWITCHING CHARACTERISTICS (tested at component), Inductive Load: Parameter Symbol Conditions 2 ) Turn-on delay time Rise time Turn-off delay time Fall time td(on) tr td(off) tf Tj=150°C VCC=400V IC=6A VGE=+15/0V RG= 8Ω 2 ) values also influenced by parasitic L- and C- in measurement and package. min. - Value typ. max. 8 Unit ns - 3 - 63 - 59 Edited by INFINEON Technologies AI PS DD HV3, L 7212U, Edition 2, 28.11.2003 CHIP DRAWING: SIGC07T60UN Edited by INFINEON Technologies AI PS DD HV3, L 7212U, Edition 2, 28.11.2003 FURTHER ELECTRICAL CHARACTERISTICS: This chip data sheet refers to the device data sheet SIGC07T60UN SKB06N60HS Package :TO220 Description: AQL 0,65 for visual inspection according to failure catalog Electrostatic Discharge Sensitive Devi.


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