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IGC100T65T8RM Datasheet, Equivalent, IGBT.

IGBT

IGBT

 

 

 

Part IGC100T65T8RM
Description IGBT
Feature IGC100T65T8RM IGBT3 Chip Medium Power Features: 650V Trench & Field Stop tec hnology high short circuit capability, self limiting short circuit current p ositive temperature coefficient easy p aralleling Qualified according to JEDE C for target applications Recommended for: power modules Applications: driv es Chip Type IGC100T65T8RM VCE 650V ICn 200A Die Size 9.
73 x 10.
23 mm2 C G E Package sawn on foil Mechanical Pa rameters Die size Emitter pad size (inc l.
gate pad) Gate pad size Area total T hickness Wafer size Max.
possible chips per wafer Passivation frontside Pad met al Backside me .
Manufacture Infineon
Datasheet
Download IGC100T65T8RM Datasheet
Part IGC100T65T8RM
Description IGBT
Feature IGC100T65T8RM IGBT3 Chip Medium Power Features: 650V Trench & Field Stop tec hnology high short circuit capability, self limiting short circuit current p ositive temperature coefficient easy p aralleling Qualified according to JEDE C for target applications Recommended for: power modules Applications: driv es Chip Type IGC100T65T8RM VCE 650V ICn 200A Die Size 9.
73 x 10.
23 mm2 C G E Package sawn on foil Mechanical Pa rameters Die size Emitter pad size (inc l.
gate pad) Gate pad size Area total T hickness Wafer size Max.
possible chips per wafer Passivation frontside Pad met al Backside me .
Manufacture Infineon
Datasheet
Download IGC100T65T8RM Datasheet

IGC100T65T8RM

IGC100T65T8RM
IGC100T65T8RM

IGC100T65T8RM

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