IGC100T65T8RM

IGC100T65T8RM IGBT3 Chip Medium Power Features:  650V Trench & Field Stop technology  high short circuit capability, self limiting short circuit current  positive temperature coefficient  easy paralleling  Qualified according to JEDEC for target applications Recommended for:  power modules Applications:  drives Chip Type IGC100T65T8RM VCE 650V ICn 200A Die Size 9.73 x 10.23 mm2 C G E Package sawn on foil Mechanical Parameters Die size Emitter pad size (incl. gate pad) Gate pad size Area total Thickness Wafer size Max.possible chips per wafer Passivation frontside Pad metal Backside metal 9.73 x 10.23 See chip drawing 1.615 x 0.817 99.5 80 200 259 Photoimide 3200 nm AlSiCu Ni Ag –system mm2 µm mm Die bond Electrically conductive epoxy glue and soft solder Wire bond Reject ink dot size for original and sealed MBB bags Storage environment for open MBB bags Al, <500µm  0.65mm ; max 1.2mm Ambient atmosphere air, Temperature 17°C – 25°C, < 6 month Acc. to IEC62258-3: Atmosphere >99% Nitrogen or inert gas, Humidity <25%RH, Temperature 17°C – 25°C, < 6 month Edited by INFINEON Technologies, IFAG IPC TD VLS, L7602M, Revision 1.2, 08.12.2014 IGC100T65T8RM Maximum Ratings Parameter Symbol Collector-Emitter voltage, Tvj =25 C VCE DC collector current, limited by Tvj max IC Pulsed collector current, tp limited by Tvj max 2 ) Ic,puls Gate emitter voltage VGE Operating junction temperature Tvj Short circuit data 2 )3) VGE = 15V, VCC = 360V, Tvj = 150°C...