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IGC54T65T8RM Datasheet, Equivalent, IGBT.

IGBT

IGBT

 

 

 

Part IGC54T65T8RM
Description IGBT
Feature IGC54T65T8RM IGBT3 Chip Medium Power F eatures: 650V Trench & Field Stop tech nology high short circuit capability, self limiting short circuit current po sitive temperature coefficient easy pa ralleling Qualified according to JEDEC for target applications Recommended f or: power modules Applications: drive s Chip Type IGC54T65T8RM VCE 650V IC n 100A Die Size 5.
97 x 8.
97 mm2 C G E Package sawn on foil Mechanical Param eters Die size Emitter pad size (incl.
gate pad) Gate pad size Area total Thic kness Wafer size Max.
possible chips per wafer Passivation frontside Pad metal Backside metal .
Manufacture Infineon
Datasheet
Download IGC54T65T8RM Datasheet
Part IGC54T65T8RM
Description IGBT
Feature IGC54T65T8RM IGBT3 Chip Medium Power F eatures: 650V Trench & Field Stop tech nology high short circuit capability, self limiting short circuit current po sitive temperature coefficient easy pa ralleling Qualified according to JEDEC for target applications Recommended f or: power modules Applications: drive s Chip Type IGC54T65T8RM VCE 650V IC n 100A Die Size 5.
97 x 8.
97 mm2 C G E Package sawn on foil Mechanical Param eters Die size Emitter pad size (incl.
gate pad) Gate pad size Area total Thic kness Wafer size Max.
possible chips per wafer Passivation frontside Pad metal Backside metal .
Manufacture Infineon
Datasheet
Download IGC54T65T8RM Datasheet

IGC54T65T8RM

IGC54T65T8RM
IGC54T65T8RM

IGC54T65T8RM

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