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IGC54T65T8RM Dataheets PDF



Part Number IGC54T65T8RM
Manufacturers Infineon
Logo Infineon
Description IGBT
Datasheet IGC54T65T8RM DatasheetIGC54T65T8RM Datasheet (PDF)

IGC54T65T8RM IGBT3 Chip Medium Power Features • VCES = 650 V • ICn = 100 A • 650 V trench & field stop technology • High short circuit capability, self limiting short circuit current • Positive temperature coefficient • Easy paralleling Potential applications • Drives Product validation • Technology qualified for industrial applications. Ready for validation in industrial applications according to the relevant tests of IEC 60747 and 60749 or alternatively JEDEC47/20/22 Description • Recommended.

  IGC54T65T8RM   IGC54T65T8RM


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IGC54T65T8RM IGBT3 Chip Medium Power Features • VCES = 650 V • ICn = 100 A • 650 V trench & field stop technology • High short circuit capability, self limiting short circuit current • Positive temperature coefficient • Easy paralleling Potential applications • Drives Product validation • Technology qualified for industrial applications. Ready for validation in industrial applications according to the relevant tests of IEC 60747 and 60749 or alternatively JEDEC47/20/22 Description • Recommended for power modules Type IGC54T65T8RM Die size 5.97 mm x 8.97 mm Delivery form Sawn on foil Datasheet www.infineon.com Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.00 2023-04-28 IGC54T65T8RM IGBT3 Chip Medium Power Table of contents Table of contents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1 Mechanical parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4 3 Chip drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 4 Bare die product specifics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Datasheet 2 Revision 1.00 2023-04-28 IGC54T65T8RM IGBT3 Chip Medium Power 1 Mechanical parameters 1 Mechanical parameters Table 1 Mechanical parameters Parameter Die size Area total Emitter pad size Gate pad size Silicon thickness Wafer size Maximum possible chips per wafer Passivation frontside Pad metal Backside metal Die attach Frontside interconnect Reject ink dot size (valid for inked delivery form only) Storage environment (<12 months) for original and sealed MBB bags Storage environment (<12 months) for open MBB bags Values 5.97 mm x 8.97 mm 53.55 mm² See chip drawing See chip drawing 80 µm 200 mm 486 Photoimide 3.2 µm AlSiCu Ni Ag - system Electrically conductive epoxy glue and soft solder Wire bond: Al ≤ 500 µm Ø 0.65 mm; max. 1.2 mm Ambient atmosphere air, temperature 17°C – 25°C Acc. to IEC62258-3: Atmosphere >99% Nitrogen or inert gas, Humidity <25%RH, Temperature 17°C – 25°C Datasheet 3 Revision 1.00 2023-04-28 IGC54T65T8RM IGBT3 Chip Medium Power 2 Characteristics 2 Characteristics Table 2 Maximum ratings Parameter Collector-emitter voltage DC collector current, limited by Tvjmax Pulsed collector current, tp limited by Tvjmax 2) Gate-emitter voltage Operating junction temperature Short-circuit withstand time2) 3) Symbol Note or test condition VCES IC ICpulse VGE Tvjop tSC VCC = 360 V, VGE = 15 V Tvj = 25 °C Tvj = 150 °C 1) depending on thermal properties of assembly 2) not subject to production test - verified by design/characterization 3) allowed number of short circuits: <1000; time between short circuits: >1s Table 3 Parameter Static characteristics (tested on wafer), Tvj = 25°C Symbol Note or test condition Collector-emitter breakdown voltage Collector-emitter saturation voltage Gate-emitter threshold voltage Zero gate-voltage collector current Gate-emitter leakage current Internal gate resistance VBRCES VCEsat VGEth ICES IGES RG,int IC = 4 mA, VGE = 0 V VGE = 15 V, IC = 90 A IC = 1.6 mA, VGE = VCE VCE = 650 V, VGE = 0 V VCE = 0 V, VGE = 20 V Table 4 Parameter Electrical characteristics Symbol Note or test condition Collector-emitter saturation voltage Input capacitance Reverse transfer capacitance VCEsat Cies Cres VGE = 15 V, IC = 100 A Tvj .


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