Document
IGBT
TRENCHSTOPTM IGBT3 Chip
SIGC40T65R3E
Data Sheet Industrial Power Control
SIGC40T65R3E
Table of Contents
Features and Applications...............................................................................................................................3 Mechanical Parameters....................................................................................................................................3 Maximum Ratings .............................................................................................................................................4 Static and Electrical Characteristics ..............................................................................................................4 Further Electrical Characteristics ...................................................................................................................5 Chip Drawing.....................................................................................................................................................6 Revision History ...............................................................................................................................................7 Relevant Application Notes .............................................................................................................................7 Legal Disclaimer ...............................................................................................................................................8
L7821M, L7821Y
2
Rev. 2.0, 04.11.2016
TRENCHSTOPTM IGBT3 Chip
Features: 650V trench & field stop technology Low VCEsat Low turn-off losses Short tail current Positive temperature coefficient Easy paralleling
SIGC40T65R3E
Recommended for: Power modules Applications: Drives
Chip Type SIGC40T65R3E
VCE 650V
ICn 75A
Die Size 5.74mm x 6.96mm
Package Sawn on foil
Mechanical Parameters Die size Emitter pad size Gate pad size Area total Silicon thickness Wafer size Maximum possible chips per wafer Passivation frontside Pad metal
Backside metal
Die bond Wire bond Reject ink dot size
for original and Storage environment sealed MBB bags (<6 months)
for open MBB bags
5.74 x 6.96
See chip drawing 1.615 x 0.817
mm2
39.95
70
µm
200
mm
666
Photoimide
3200nm AlSiCu
Ni Ag – system To achieve a reliable solder connection it is strongly recommended not to consume the Ni layer completely during
production process
Electrically conductive epoxy glue and soft solder
Al, ≤500µm
0.65mm; max. 1.2mm
Ambient atmosphere air, temperature 17°C – 25°C
Acc. IEC 62258-3; Section 9.4 Storage Environment.
L7821M, L7821Y
3
Rev. 2.0, 04.11.2016
SIGC40T65R3E
Maximum Ratings
In general, from reliability and lifetime point of view, the lower the operation junction temperature and/or the applied voltage, the greater the expected lifetime of any semiconductor device.
Parameter
Symbol
Value
Unit
Collector-emitter voltage, Tvj=25C DC collector current, limited by Tvj max 1 Pulsed collector current, tp limited by Tvj max 2 Gate-emitter voltage Junction temperature Operating junction temperature Short circuit data 1 / 2 / 3 VGE=15V, VCC=360V, Tvj=150°C
VCE IC IC,puls VGE Tvj Tvj op tsc
650
V
-
A
225
A
20
V
-40 ... +175
°C
-40 ... +150
°C
6
µs
Static Characteristics (tested on wafer), Tvj=25C
Parameter
Symbol
Collector-emitter breakdown voltage Collector-emitter saturation voltage Gate-emitter threshold voltage Zero gate voltage collector current Gate-emitter leakage current Integrated gate resistor
V(BR)CES VCEsat VGE(th) ICES IGES
rG
Conditions
VGE=0V, IC=4mA VGE=15V, IC=75A IC=1.2mA, VGE=VCE VCE=650V, VGE=0V VCE=0V, VGE=20V
Value
Unit
min. typ. max.
650 -
-
0.93 1.45 1.77 V
5.1 5.8 6.4
-
-
3.8 µA
-
- 600 nA
-
4
-
Electrical Characteristics 2 Parameter
Collector-emitter saturation voltage Input capacitance Reverse transfer capacitance
Symbol
VCEsat Cies Cres
Conditions
VGE=15V, IC=75A, Tvj=175C VCE=25V,
VGE=0V, f=1MHz Tvj=25C
Value Unit
min. typ. max.
-
1.9
-
V
- 4620 pF
- 137 -
1 Depending on thermal properties of assembly. 2 Not subject to production test - verified by design/characterization. 3 Allowed number of short circuits: <1000; time between short circuits: >1s.
L7821M, L7821Y
4
Rev. 2.0, 04.11.2016
SIGC40T65R3E
Further Electrical Characteristics
Switching characteristics and thermal properties are depending strongly on module design and mounting technology and can therefore not be specified for a bare die.
Application example
-
-
L7821M, L7821Y
5
Rev. 2.0, 04.11.2016
Chip Drawing
SIGC40T65R3E
E
E
G
T
E
E
E = Emitter G = Gate T = Test pad do not contact
L7821M, L7821Y
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Rev. 2.0, 04.11.2016
SIGC40T65R3E
Bare Die Product Specifics Test coverage at wafer level cannot cover all application conditions. Therefore it is recommended to test all characteristics which are relevant for the .