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SIGC40T65R3E Dataheets PDF



Part Number SIGC40T65R3E
Manufacturers Infineon
Logo Infineon
Description IGBT
Datasheet SIGC40T65R3E DatasheetSIGC40T65R3E Datasheet (PDF)

IGBT TRENCHSTOPTM IGBT3 Chip SIGC40T65R3E Data Sheet Industrial Power Control SIGC40T65R3E Table of Contents Features and Applications..3 Mechanical Parameters..3 Maximum Ratings .

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IGBT TRENCHSTOPTM IGBT3 Chip SIGC40T65R3E Data Sheet Industrial Power Control SIGC40T65R3E Table of Contents Features and Applications...............................................................................................................................3 Mechanical Parameters....................................................................................................................................3 Maximum Ratings .............................................................................................................................................4 Static and Electrical Characteristics ..............................................................................................................4 Further Electrical Characteristics ...................................................................................................................5 Chip Drawing.....................................................................................................................................................6 Revision History ...............................................................................................................................................7 Relevant Application Notes .............................................................................................................................7 Legal Disclaimer ...............................................................................................................................................8 L7821M, L7821Y 2 Rev. 2.0, 04.11.2016 TRENCHSTOPTM IGBT3 Chip Features:  650V trench & field stop technology  Low VCEsat  Low turn-off losses  Short tail current  Positive temperature coefficient  Easy paralleling SIGC40T65R3E Recommended for:  Power modules Applications:  Drives Chip Type SIGC40T65R3E VCE 650V ICn 75A Die Size 5.74mm x 6.96mm Package Sawn on foil Mechanical Parameters Die size Emitter pad size Gate pad size Area total Silicon thickness Wafer size Maximum possible chips per wafer Passivation frontside Pad metal Backside metal Die bond Wire bond Reject ink dot size for original and Storage environment sealed MBB bags (<6 months) for open MBB bags 5.74 x 6.96 See chip drawing 1.615 x 0.817 mm2 39.95 70 µm 200 mm 666 Photoimide 3200nm AlSiCu Ni Ag – system To achieve a reliable solder connection it is strongly recommended not to consume the Ni layer completely during production process Electrically conductive epoxy glue and soft solder Al, ≤500µm  0.65mm; max. 1.2mm Ambient atmosphere air, temperature 17°C – 25°C Acc. IEC 62258-3; Section 9.4 Storage Environment. L7821M, L7821Y 3 Rev. 2.0, 04.11.2016 SIGC40T65R3E Maximum Ratings In general, from reliability and lifetime point of view, the lower the operation junction temperature and/or the applied voltage, the greater the expected lifetime of any semiconductor device. Parameter Symbol Value Unit Collector-emitter voltage, Tvj=25C DC collector current, limited by Tvj max 1 Pulsed collector current, tp limited by Tvj max 2 Gate-emitter voltage Junction temperature Operating junction temperature Short circuit data 1 / 2 / 3 VGE=15V, VCC=360V, Tvj=150°C VCE IC IC,puls VGE Tvj Tvj op tsc 650 V - A 225 A 20 V -40 ... +175 °C -40 ... +150 °C 6 µs Static Characteristics (tested on wafer), Tvj=25C Parameter Symbol Collector-emitter breakdown voltage Collector-emitter saturation voltage Gate-emitter threshold voltage Zero gate voltage collector current Gate-emitter leakage current Integrated gate resistor V(BR)CES VCEsat VGE(th) ICES IGES rG Conditions VGE=0V, IC=4mA VGE=15V, IC=75A IC=1.2mA, VGE=VCE VCE=650V, VGE=0V VCE=0V, VGE=20V Value Unit min. typ. max. 650 - - 0.93 1.45 1.77 V 5.1 5.8 6.4 - - 3.8 µA - - 600 nA - 4 -  Electrical Characteristics 2 Parameter Collector-emitter saturation voltage Input capacitance Reverse transfer capacitance Symbol VCEsat Cies Cres Conditions VGE=15V, IC=75A, Tvj=175C VCE=25V, VGE=0V, f=1MHz Tvj=25C Value Unit min. typ. max. - 1.9 - V - 4620 pF - 137 - 1 Depending on thermal properties of assembly. 2 Not subject to production test - verified by design/characterization. 3 Allowed number of short circuits: <1000; time between short circuits: >1s. L7821M, L7821Y 4 Rev. 2.0, 04.11.2016 SIGC40T65R3E Further Electrical Characteristics Switching characteristics and thermal properties are depending strongly on module design and mounting technology and can therefore not be specified for a bare die. Application example - - L7821M, L7821Y 5 Rev. 2.0, 04.11.2016 Chip Drawing SIGC40T65R3E E E G T E E E = Emitter G = Gate T = Test pad do not contact L7821M, L7821Y 6 Rev. 2.0, 04.11.2016 SIGC40T65R3E Bare Die Product Specifics Test coverage at wafer level cannot cover all application conditions. Therefore it is recommended to test all characteristics which are relevant for the .


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