Document
IGC39T65T8M
IGBT3 Chip Medium Power
Features: 650V Trench & Field Stop technology high short circuit capability, self limiting
short circuit current positive temperature coefficient easy paralleling Qualified according to JEDEC for target
applications
Recommended for: power modules
Applications: drives
Chip Type IGC39T65T8M
VCE 650V
ICn 75A
Die Size 6.59 x 5.91 mm2
C
G E
Package sawn on foil
Mechanical Parameters Die size Emitter pad size (incl. gate pad) Gate pad size Area total Thickness Wafer size Max.possible chips per wafer Passivation frontside Pad metal Backside metal
6.59 x 5.91 See chip drawing
1.52 x 0.817 38.9 80 200 686 Photoimide 3200 nm AlSiCu Ni Ag –system
mm2
µm mm
Die bond
Electrically conductive epoxy glue and soft solder
Wire bond
Reject ink dot size
for original and sealed MBB bags Storage environment for open MBB bags
Al, <500µm
0.65mm ; max 1.2mm
Ambient atmosphere air, Temperature 17°C – 25°C, < 6 month
Acc. to IEC62258-3: Atmosphere >99% Nitrogen or inert gas, Humidity <25%RH, Temperature 17°C – 25°C, < 6 month
Edited by INFINEON Technologies, IFAG IPC TD VLS, L7572M, Edition 1.1, 05.04.2012
IGC39T65T8M
Maximum Ratings Parameter
Symbol
Collector-Emitter voltage, Tvj =25 C
VCE
DC collector current, limited by Tvj max
IC
Pulsed collector current, tp limited by Tvj max 2 )
Ic,puls
Gate emitter voltage
VGE
Operating junction temperature
Tvj
Short circuit data 2 )3) VGE = 15V, VCC = 360V, Tvj = 150°C
tSC
1 ) depending on thermal properties of assembly
2 ) not subject to production test - verified by design/characterization
3) allowed number of short circuits: <1000; time between short circuits: >1s.
Value
Unit
650
V
1)
A
225
A
20
V
-40 ... +175
°C
10
µs
Static Characteristics (tested on wafer), Tvj =25 C
Parameter
Symbol
Collector-Emitter breakdown voltage Collector-Emitter saturation voltage Gate-Emitter threshold voltage Zero gate voltage collector current Gate-Emitter leakage current Integrated gate resistor
V(BR)CES VCEsat VGE(th) ICES IGES rG
Conditions
VGE=0V , IC=4 mA VGE=15V, IC=75A IC=1.2mA , VGE=VCE VCE=650V , VGE=0V VCE=0V , VGE=20V
Value Unit
min. typ. max.
650
1.08 1.55 1.82 V
5.1 5.8 6.4
0.39 µA
600 nA
none
Electrical Characteristics (not subject to production test - verified by design / characterization)
Parameter
Symbol
Conditions
Value min. typ. max.
Collector-Emitter saturation voltage Input capacitance Reverse transfer capacitance
VCEsat Cies Cres
VGE=15V, IC=75A, Tvj =150 C VCE=25V,
VGE=0V, f=1MHz Tvj =25 C
1.75 4620 137
Unit V pF
Edited by INFINEON Technologies, IFAG IPC TD VLS, L7572M, Edition 1.1, 05.04.2012
IGC39T65T8M
Further Electrical Characteristic
Switching characteristics and thermal properties are depending strongly on module design and mounting technology and can therefore not be specified for a bare die.
This chip data sheet refers to the device data sheet
FS75R07N2E4_B11
Rev 2.0
Edited by INFIN.