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SIDC30D120H8 Datasheet, Equivalent, switching diode.

Fast switching diode

Fast switching diode

 

 

 

Part SIDC30D120H8
Description Fast switching diode
Feature SIDC30D120H8 Fast switching diode chip in Emitter Controlled Technology Featu res: 1200V Emitter Controlled technolo gy 120 µm chip Soft, fast switching Low reverse recovery charge Small temp erature coefficient Qualified accordin g to JEDEC for target applications Rec ommended for: Power modules and discre te devices Applications: SMPS, resonan t applications, drives Chip Type VR IFn SIDC30D120H8 1200V 50A Die Size 5 .
5 x 5.
5 mm2 Package sawn on foil Mec hanical Parameters Die size Area total 5.
5 x 5.
5 30.
25 mm2 Anode pad size 4.
78 x 4.
78 Thickness 120 µm Wafer size 200 mm .
Manufacture Infineon
Datasheet
Download SIDC30D120H8 Datasheet
Part SIDC30D120H8
Description Fast switching diode
Feature SIDC30D120H8 Fast switching diode chip in Emitter Controlled Technology Featu res: 1200V Emitter Controlled technolo gy 120 µm chip Soft, fast switching Low reverse recovery charge Small temp erature coefficient Qualified accordin g to JEDEC for target applications Rec ommended for: Power modules and discre te devices Applications: SMPS, resonan t applications, drives Chip Type VR IFn SIDC30D120H8 1200V 50A Die Size 5 .
5 x 5.
5 mm2 Package sawn on foil Mec hanical Parameters Die size Area total 5.
5 x 5.
5 30.
25 mm2 Anode pad size 4.
78 x 4.
78 Thickness 120 µm Wafer size 200 mm .
Manufacture Infineon
Datasheet
Download SIDC30D120H8 Datasheet

SIDC30D120H8

SIDC30D120H8
SIDC30D120H8

SIDC30D120H8

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