SIDC23D120F6

SIDC23D120F6 Fast switching diode chip in Emitter Controlled Technology Features: Recommended for: A  1200V technology 120 µm chip  power modules and discrete  soft, fast switching devices  low reverse recovery charge C  small temperature coefficient  qualified according to JEDEC for target Applications: applications  SMPS, resonant applications, drives Chip Type SIDC23D120F6 VR IFn 1200V 25A Die Size 3.5 x 6.5 mm2 Package sawn on foil Mechanical Parameters Die size Area total Anode pad size Thickness Wafer size Max. possible chips per wafer Passivation frontside Pad metal Backside metal 3.5 x 6.5 22.75 2.78 x 5.78 120 150 644 Photoimide 3200 nm AlSiCu Ni Ag –system mm2 µm mm Die bond Electrically conductive epoxy glue and soft solder Wire bond Reject ink dot size Storage environment for original and sealed MBB bags for open MBB bags Al, 500µm  0.65mm; max 1.2mm Ambient atmosphere air, Temperature 17°C – 25°C, < 6 month Acc. to IEC62258-3: Atmosphere >99% Nitrogen or inert gas, Humidity <25%RH, Temperature 17°C – 25°C, < 6 month Edited by INFINEON Technologies, IPC TD VLS, L4275M, Rev. 2.1, 14.05.2013 SIDC23D120F6 Maximum Ratings Parameter Symbol Condition Repetitive peak reverse voltage VRRM Tvj = 25 °C Continuous forward current IF Tvj < 150°C Maximum repetitive forward current²) IF R M Tvj < 150°C Operating junction and storage temperature Tvj, Tstg 1 ) depending on thermal properties of assembly 2 ) not subject to p...