Fast switching diode
SIDC03D120H8
Fast switching diode chip in Emitter Controlled Technology
Features:
1200V Emitter Controlled technolog...
Description
SIDC03D120H8
Fast switching diode chip in Emitter Controlled Technology
Features:
1200V Emitter Controlled technology 120 µm chip
Soft, fast switching Low reverse recovery charge Small temperature coefficient Qualified according to JEDEC for target
applications
Recommended for:
Power modules and discrete devices
Applications:
SMPS, resonant applications, drives
Chip Type
VR
IFn
SIDC03D120H8 1200V 3A
Die Size 1.75 x 1.85 mm2
Package sawn on foil
Mechanical Parameters
Die size Area total
1.75 x 1.85 3.24
mm2
Anode pad size
1.03 x 1.13
Thickness
120
µm
Wafer size
200
mm
Max. possible chips per wafer
8702
Passivation frontside
Photoimide
Pad metal
3200 nm AlSiCu
Backside metal
Ni Ag – system To achieve a reliable solder connection it is strongly recommended not to consume the Ni layer completely during
production process
Die bond
Electrically conductive epoxy glue and soft solder
Wire bond
Al, 500 µm
Reject ink dot size
0.65 mm; max 1.2 mm
Storage environment
for original and sealed MBB bags
for open MBB bags
Ambient atmosphere air, Temperature 17 °C – 25 °C, < 6 months
Acc. to IEC62258-3: Atmosphere > 99% Nitrogen or inert gas, Humidity < 25% RH, Temperature 17 °C – 25 °C, < 6 months
Edited by INFINEON Technologies, L4051C, Rev 2.1, 14.10.2015
SIDC03D120H8
Maximum Ratings
Parameter
Symbol
Repetitive peak reverse voltage
VRRM
Continuous forward current
IF
Maximum repetitive forward current²) IFR M
Junction temperat...
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